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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base-to-Emitter Saturation Voltage (VBE(sat)) | |
| Collector Current Pulse (ICP) | |
| Collector to Base Breakdown Voltage (V(BR)CBO) | |
| Collector-to-Base Voltage (VCBO) | |
| Collector-to-Emitter Breakdown Voltage (Minimum @ IC = -1 mA, RBE = ∞) | |
| Collector-to-Emitter Breakdown Voltage (Minimum @ IC = -100 µA, RBE = 0 Ω) | |
| Collector-to-Emitter Saturation Voltage (Minimum/Maximum @ IC = -2 A, IB = -40 mA) | |
| Collector-to-Emitter Voltage (Maximum) | |
| Current | |
| DC Current Gain (Minimum @ VCE = -2 V, IC = -10 A) | |
| DC Current Gain (Minimum @ Vce=2 V, Ic=4 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter to Base Breakdown Voltage (V(BR)EBO) | |
| Emitter-to-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Halogen Free | |
| Junction Temperature (TJ) | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Time (tstg) | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ECH8102-TL-H is a PNP bipolar transistor manufactured by ON Semiconductor, designed for high-current switching applications. It has a maximum collector-to-base voltage of -30V and a continuous collector current rating of -12A, with pulse capability up to -24A.
Electrical characteristics include a DC current gain (hFE) ranging from 200 to 560 at -500mA and -2V, and a low collector-to-emitter saturation voltage of -80 to -135mV at -6A and -300mA base current. The transistor offers a typical gain-bandwidth product of 140MHz and fast switching speeds with turn-on time of 91ns, storage time of 125ns, and fall time of 17ns.
Typical applications include high-power IGBT and MOSFET gate drivers, DC/DC converters, lamp drivers, and motor drivers, leveraging the low saturation voltage and high current handling capability.
The device is housed in an 8-SMD flat lead package (ECH8) suitable for surface mount assembly. It is supplied in tape and reel with a standard quantity of 3000 pieces per reel and is halogen-free compliant.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.25 | $0.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is a PNP bipolar transistor.
The maximum collector-to-base voltage (VCBO) is -30V.
It comes in an 8-SMD flat lead package (8-ECH).
The maximum junction temperature is 150°C.
The hFE ranges from 200 to 560 at VCE = -2V and IC = -500mA.
The saturation voltage is -80 to -135mV at IC = -6A and IB = -300mA.
The device is supplied in tape and reel with 3000 pieces per reel.