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ECH8102-TL-H The ECH8102-TL-H is a PNP bipolar transistor from ON Semiconductor with a -30V collector-to-base voltage and -12A continuous collector current. It features low collector-to-emitter saturation voltage and high-speed switching.
Mfr Part #:

ECH8102-TL-H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ECH8102-TL-H is a PNP bipolar transistor from ON Semiconductor with a -30V collector-to-base voltage and -12A continuous collector current. It features low collector-to-emitter saturation voltage and high-speed switching.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.25

ECH8102-TL-H Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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6,000 pcs
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6000 pcs On Request 1 On Request On Request On Request On Request On Request
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ECH8102-TL-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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ECH8102-TL-H Description

Short technical summary and product information.

The ECH8102-TL-H is a PNP bipolar transistor manufactured by ON Semiconductor, designed for high-current switching applications. It has a maximum collector-to-base voltage of -30V and a continuous collector current rating of -12A, with pulse capability up to -24A.

 

Electrical characteristics include a DC current gain (hFE) ranging from 200 to 560 at -500mA and -2V, and a low collector-to-emitter saturation voltage of -80 to -135mV at -6A and -300mA base current. The transistor offers a typical gain-bandwidth product of 140MHz and fast switching speeds with turn-on time of 91ns, storage time of 125ns, and fall time of 17ns.

 

Typical applications include high-power IGBT and MOSFET gate drivers, DC/DC converters, lamp drivers, and motor drivers, leveraging the low saturation voltage and high current handling capability.

 

The device is housed in an 8-SMD flat lead package (ECH8) suitable for surface mount assembly. It is supplied in tape and reel with a standard quantity of 3000 pieces per reel and is halogen-free compliant.

ECH8102-TL-H Quick Information

Product Type: Transistor - Single PNP Bipolar
Series: ECH8102
Canonical Name: ECH8102-TL-H PNP Bipolar Transistor, -30V, -12A
Subcategory: Single PNP

ECH8102-TL-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

ECH8102-TL-H Estimated Pricing

Qty Low High
3,000+ $0.25 $0.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

ECH8102-TL-H Features

  • Low collector-to-emitter saturation voltage.
  • High current capacitance up to -12A.
  • High-speed switching with 91ns turn-on time.
  • Halogen-free compliance confirmed.
  • 1.6W power dissipation on ceramic substrate.

ECH8102-TL-H Applications

  • Ideal for high-power IGBT/MOSFET gate drivers.
  • Used in DC/DC converter circuits.
  • Suitable for lamp and motor driver applications.
  • Functions in high-speed switching power supplies.

ECH8102-TL-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transistor polarity of the ECH8102-TL-H?

It is a PNP bipolar transistor.

What is the maximum collector-to-base voltage?

The maximum collector-to-base voltage (VCBO) is -30V.

What package does the ECH8102-TL-H come in?

It comes in an 8-SMD flat lead package (8-ECH).

What is the maximum junction temperature?

The maximum junction temperature is 150°C.

What is the DC current gain (hFE) at -500mA?

The hFE ranges from 200 to 560 at VCE = -2V and IC = -500mA.

What is the collector-to-emitter saturation voltage at -6A?

The saturation voltage is -80 to -135mV at IC = -6A and IB = -300mA.

What is the standard packaging quantity?

The device is supplied in tape and reel with 3000 pieces per reel.

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