| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The ECG291 is a low-frequency power silicon NPN transistor manufactured by ECG. It features a collector-base voltage (Vcbo) of 130V and a continuous collector current (Ic) of 4A. This transistor is suitable for general-purpose low-frequency power applications.
Key electrical characteristics include its NPN silicon technology, enabling reliable performance. The component is specified for low-frequency operation. While specific details on saturation voltage, current gain, and transition frequency are not detailed here, its primary ratings indicate suitability for power switching and amplification tasks within its specified limits.
Environmental compliance data indicates RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1, suggesting it is suitable for standard assembly processes. REACH status is unaffected. Further details regarding packaging, mounting type, and specific application contexts would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-base voltage (Vcbo) for the ECG291 transistor is 130V.
The continuous collector current (Ic) for the ECG291 transistor is 4A.
The ECG291 is an NPN silicon transistor.
The ECG291 transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the ECG291 transistor is 1 Unlimited.