| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name |
The ECG218 is a PNP Silicon Transistor from manufacturer ECG, housed in a TO66 package. This component is designed for various electronic applications requiring reliable transistor performance.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 80V and a maximum collector-base voltage (Vcb) of 90V. The maximum collector current (Ic max) is rated at 3A, with a maximum power dissipation (Pc) of 25W. The minimum forward current transfer ratio (hFE) is 20, and it has a minimum transition frequency (ft) of 3 MHz.
With a maximum operating junction temperature of 175°C, the ECG218 is suitable for applications demanding thermal stability. The transistor is not surface mounted, indicating through-hole mounting.
Environmental compliance data indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though this data is considered low confidence and requires verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 80V, and the maximum collector-base voltage (Vcb) is 90V.
The ECG218 is housed in a TO66 case and is not surface mounted.
The maximum operating junction temperature (Tj) is 175°C.
The maximum collector current (Ic) is 3A.
The minimum forward current transfer ratio (hFE) is 20.
The minimum transition frequency (ft) is 3 MHz.
The maximum collector power dissipation (Pc) is 25W.