| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The ECG175 is a silicon NPN transistor from manufacturer ECG. It is designed for various electronic applications requiring robust performance. Key electrical specifications include a maximum collector-emitter voltage (Vce) of 300V and a maximum collector-base voltage (Vcb) of 500V. The maximum collector current (Ic) is rated at 3A, with a maximum power dissipation (Pc) of 40W.
This transistor has a minimum forward current transfer ratio (hFE) of 50 and a minimum transition frequency (ft) of 10MHz. The maximum operating junction temperature (Tj) is 175°C, ensuring reliable operation under demanding conditions. The ECG175 is supplied in a TO66 case and is not a surface-mounted device.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level (MSL) 1 Unlimited, and REACH Unaffected status. These attributes are based on available data and should be verified for critical applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 300V.
The maximum collector current (Ic) is 3A.
The maximum power dissipation (Pc) is 40W.
The ECG175 is housed in a TO66 case.
The maximum operating junction temperature (Tj) is 175°C.
The minimum DC current gain (hFE) is 50.
The minimum transition frequency (ft) is 10MHz.