| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,232 pcs
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7232 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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35 pcs
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35 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The ST E53NA50 is an N-Channel Enhancement Mode Fast Power MOS Transistor manufactured by STMicroelectronics. This component is designed for power applications requiring fast switching capabilities.
Key electrical characteristics include a continuous source-drain current of 53A and a pulsed source-drain current of up to 212A. The typical forward on-voltage is 1.6V at 53A. Switching performance is highlighted by a typical turn-on time of 57ns and a typical fall time of 36ns under specified test conditions.
Further specifications include a total gate charge of 470nC typical. The device also features a source-drain diode with a typical reverse recovery time of 31.5ns and a typical reverse recovery charge of 1000µC.
This transistor is suitable for various power switching applications where efficiency and speed are critical. Its robust design and performance metrics make it a reliable choice for demanding electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous source-drain current is 53A.
The typical forward on-voltage is 1.6V.
The typical turn-on time is 57ns and the typical fall time is 36ns.
The typical total gate charge is 470nC.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.