| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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26 pcs
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26 pcs | On Request | 1 | On Request | On Request | 2000 | On Request | On Request |
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The Intel E28F128J3A150 is a StrataFlash Memory (J3) device from Intel Corp, utilizing two-bit-per-cell technology for high density storage. It offers an initial access speed of 110ns and supports asynchronous page mode reads at 25ns. The device includes a 32-byte write buffer and features software program and erase suspend support.
Designed for mainstream performance, the E28F128J3A150 provides benefits such as more density in less space and a low cost-per-bit. It supports both code and data storage, with high-density symmetrical 128-Kbyte blocks. Security features include a 128-bit protection register and a 64-bit unique device identifier.
This memory device operates within a voltage range of 2.7V to 3.6V for both VCC and VCCQ. It is manufactured using the 0.25 μm ETOX VI process and comes in a 56-lead TSOP package. The device is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage (VCC and VCCQ) for the E28F128J3A150 ranges from 2.7V to 3.6V.
The E28F128J3A150 is available in a 56-lead TSOP package.
The operating temperature range for this memory device is -40°C to +85°C.
Yes, the E28F128J3A150 is listed as RoHS3 Compliant.