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E1108AEBG-8E-F The Elpida Memory E1108AEBG-8E-F is a 1G bits DDR2 SDRAM memory component. It operates with a power supply voltage range of -1.0V to +2.3V.
Mfr Part #:

E1108AEBG-8E-F

Available from 1 distributors
Mfr Name: Elpida
Elpida
The Elpida Memory E1108AEBG-8E-F is a 1G bits DDR2 SDRAM memory component. It operates with a power supply voltage range of -1.0V to +2.3V.
✓ Total Stock: 2,170 pcs
$ Price Range: $1.28

E1108AEBG-8E-F Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
2,170 pcs
On Request
2170 pcs On Request 1 On Request On Request 10+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

E1108AEBG-8E-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacity
Memory Type
Operating Temperature
Power Dissipation
SVHC Present
Voltage
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E1108AEBG-8E-F Description

Short technical summary and product information.

The Elpida Memory E1108AEBG-8E-F is a 1G bits DDR2 SDRAM, manufactured by Elpida Memory. This component is housed in a BGA package.

 

Key electrical specifications include a power supply voltage range for VDD from -1.0V to +2.3V and for VDDQ from -0.5V to +2.3V. The input and output voltages also range from -0.5V to +2.3V. It has a power dissipation of 1.0W and a short circuit output current of 50mA.

 

This DDR2 SDRAM features a double-data-rate architecture with two data transfers per clock cycle, realized by a 4-bit prefetch pipelined architecture. It includes bi-directional differential data strobe (DQS and /DQS), differential clock inputs (CK and /CK), and DLL for aligning DQ and DQS transitions with CK transitions. Additional features include data mask (DM) for write data, posted /CAS by programmable additive latency, and Off-Chip-Driver Impedance Adjustment with On-Die-Termination for improved signal quality.

 

The storage temperature ranges from -55℃ to +100℃. The component is suitable for various applications requiring high-speed data transfer and memory storage.

E1108AEBG-8E-F Quick Information

Product Type: DDR2 SDRAM
Canonical Name: ELPIDA E1108AEBG-8E-F 1G bits DDR2 SDRAM
Subcategory: SDRAM

E1108AEBG-8E-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

E1108AEBG-8E-F Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

E1108AEBG-8E-F Features

  • 1G bits DDR2 SDRAM memory component.
  • Wide operating voltage range for VDD and VDDQ.
  • Double-data-rate architecture for high speed.
  • BGA package for compact integration.
  • Features differential clock and data strobe.

E1108AEBG-8E-F Applications

  • Suitable for high-speed data systems.
  • Used in memory intensive applications.
  • Ideal for embedded systems.
  • Component for computing platforms.

E1108AEBG-8E-F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage range for this DDR2 SDRAM?

For VDD, the range is -1.0V to +2.3V. For VDDQ, the range is -0.5V to +2.3V.

What package type is the E1108AEBG-8E-F available in?

BGA (Ball Grid Array) package.

What is the storage temperature range?

-55°C to +100°C.

What is the memory capacity of the E1108AEBG-8E-F?

1 Gbit (gigabit).

What is the short circuit output current?

50 mA.

What is the power dissipation rating?

1.0 W.

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