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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Max) @ Ib, Ic | |
| Base-Emitter Turn-On Voltage (Max) @ Ic, Vce | |
| Case Material | |
| Collector Cutoff Current (Max) | |
| Collector-Base Breakdown Voltage (Min) | |
| Collector-Emitter Breakdown Voltage (Min) | |
| Collector-Emitter Saturation Voltage (Maximum @ IB = -200 mA, IC = -2 A) | |
| Collector-Emitter Saturation Voltage (Maximum @ Ib=10 mA, Ic=100 mA) | |
| Current | |
| Current Gain-Bandwidth Product (Typ) | |
| DC Current Gain (Minimum @ IC = -10 mA, VCE = -1 V) | |
| DC Current Gain (Minimum @ IC = -3 A, VCE = -1 V) | |
| DC Current Gain (Minimum @ IC = -4 A, VCE = -1 V) | |
| DC Current Gain (Minimum/Typical @ IC = -1 A, VCE = -1 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current (Max) | |
| Emitter-Base Breakdown Voltage (Min) | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Typ) | |
| Power | |
| Power Dissipation (Nominal @ Mounted on FR -4 PCB, pad layout as shown on page 4) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Time - Turn-On (Typ) | |
| Tape & Reel | |
| Termination Finish | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Weight |
The DZT953-13 is a PNP bipolar junction transistor from Diodes Incorporated designed for medium power switching and amplification applications. It features a minimum collector-emitter breakdown voltage (VCEO) of -100V and a collector-base breakdown voltage of -140V. The continuous collector current rating is -5A with a peak pulse current capability of -10A. DC current gain (hFE) is guaranteed at a minimum of 100 at IC = 1A, VCE = 1V, with a typical value of 200. Collector-emitter saturation voltage is typically -420mV at IC = 4A and IB = 400mA. The transistor offers a transition frequency (fT) of 125 MHz and output capacitance of 65 pF. Switching characteristics include turn-on time of 65 ns, making it suitable for medium-speed switching. Power dissipation is 3W when mounted on FR-4 PCB with at least 4 square inches of copper (per datasheet conditions). The device operates over a junction temperature range of -55°C to +150°C. The DZT953-13 is packaged in a surface-mount SOT-223 (TO-261-4) case with matte tin plated terminals. It is RoHS compliant, lead-free by design, and rated MSL Level 1 per J-STD-020D. Complementary NPN type DZT853 is available.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.23 | $0.23 |
| 5,000+ | $0.21 | $0.21 |
| 7,500+ | $0.20 | $0.20 |
| 12,500+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (VCEO) is -100V at IC = -10mA.
The DZT953-13 is available in a surface-mount SOT-223 package (also known as TO-261-4).
The operating junction temperature range is -55°C to +150°C.
Yes, the DZT953-13 is RoHS compliant and lead-free by design.
The minimum DC current gain is 100 at IC = 1A, VCE = 1V, with a typical value of 200.