DZT853-13

The DZT853-13 is an NPN epitaxial planar silicon transistor designed for medium power switching and amplification applications. It features a maximum collector-emitter voltage (Vceo) of 100V and a continuous collector current (Ic) rating of 6A. The DC current gain (hFE) is specified at a minimum of 100 at Ic=2A, Vce=2V, ensuring reliable current amplification. The collector-emitter saturation voltage is typically 340mV at Ib=500mA, Ic=5A, contributing to efficient switching performance. With a gain-bandwidth product (ft) of 130MHz, the device is suitable for moderate frequency circuits.

Thermal characteristics include a maximum power dissipation of 1W when mounted on standard FR-4 PCB (with 4 sq. in. copper pad), and an operating junction temperature range from -55°C to 150°C. The transistor is supplied in a surface-mount SOT-223-3 package (TO-261-4 equivalent), which is ideal for automated assembly processes. The case is molded green compound with UL 94V-0 flammability rating, and terminals are matte tin annealed over copper leadframe for lead-free solderability.

Environmental compliance includes RoHS3 compliance, lead-free design, and Green Device status per Diodes Incorporated policy. The moisture sensitivity level is MSL 1 (unlimited) per J-STD-020C. A complementary PNP type, DZT953, is also available for push-pull circuit designs. The device is suitable for use in power management, load switching, and general purpose amplification circuits.