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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
454 pcs
|
454 pcs | On Request | 1 | On Request | On Request | 1928+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Base-Emitter Turn-On Voltage (VBE(on)) | |
| Collector Cutoff Current (ICBO) (Maximum @ Vcb=120 V, Ie=0, Ta=100 °C) | |
| Collector Cutoff Current (ICBO) (Maximum @ Vcb=120 V, Ie=0, Ta=25 °C) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Collector-Emitter Saturation Voltage (VCE(SAT)) (Maximum @ Ib=5 mA, Ic=0.1 A) | |
| Collector-Emitter Saturation Voltage (VCE(SAT)) (Maximum @ Ib=50 mA, Ic=1 A) | |
| Collector-Emitter Saturation Voltage (VCE(SAT)) (Maximum @ Ib=50 mA, Ic=2 A) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) @ 10A, 1V | |
| DC Current Gain (hFE) @ 10mA, 1V | |
| DC Current Gain (hFE) @ 5A, 1V | |
| Emitter Cutoff Current (Iebo) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cobo) | |
| Power | |
| Power Dissipation (Ptot) (Maximum @ Typical PCB, copper area ≥4 sq in) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Turn-Off Time (toff) | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The DZT851-13 is an NPN epitaxial planar bipolar junction transistor designed for medium power switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current rating of 6A. The device offers low saturation voltage, with a maximum VCE(SAT) of 375mV at 6A collector current and 300mA base current. DC current gain (hFE) ranges from 100 to 300 at 2A, 1V, with a minimum of 100 at 10mA, 1V. Transition frequency is typically 130MHz at 100mA, 10V. Power dissipation is rated at 1W when mounted on FR-4 PCB with standard pad layout, and up to 3W with a copper area of at least 4 square inches. The transistor is housed in a SOT-223 (TO-261AA) surface mount package with gull wing terminals, suitable for automated assembly. It is RoHS compliant and lead-free, with a moisture sensitivity level of 1 (unlimited). A complementary PNP type, DZT951, is also available.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.17 | $0.17 |
| 5,000+ | $0.15 | $0.15 |
| 7,500+ | $0.15 | $0.15 |
| 12,500+ | $0.14 | $0.14 |
| 17,500+ | $0.14 | $0.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 60V.
SOT-223 (TO-261AA) surface mount package.
-55°C to 150°C (junction temperature).
Yes, RoHS compliant and lead-free.
hFE ranges from 100 to 300 at 2A, 1V; minimum 100 at 10mA, 1V.
Maximum 375mV at 6A collector current with 300mA base current.
Typical 130MHz at 100mA, 10V.