DZT491-13 NPN bipolar junction transistor rated for 60V collector-emitter voltage and 1A continuous collector current. Housed in a surface-mount SOT-223-3 package.
Mfr Part #:

DZT491-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
NPN bipolar junction transistor rated for 60V collector-emitter voltage and 1A continuous collector current. Housed in a surface-mount SOT-223-3 package.
✓ Total Stock: 20,000 pcs
$ Price Range: $0.11 - $0.14

DZT491-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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20,000 pcs
20000 pcs On Request 1 On Request On Request On Request On Request On Request

DZT491-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Industrial Grade
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Finish
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

DZT491-13 Description

Short technical summary and product information.

The DZT491-13 is an NPN epitaxial planar bipolar junction transistor from Diodes Incorporated designed for medium power switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current rating of 1A, with a peak collector current capability of 2A. The device offers a DC current gain (hFE) of 100 minimum at 500mA and 5V, and a current gain-bandwidth product (fT) of 150 MHz minimum, making it suitable for a variety of general-purpose and medium-speed switching circuits.

 

This transistor is housed in a SOT-223 surface-mount package with matte tin termination finish, compatible with automated assembly processes. It is rated for operation over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. The DZT491-13 is lead-free by design and RoHS compliant, and it is also available as a complementary PNP type (DZT591C).

DZT491-13 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: DZT491
Canonical Name: DZT491-13 NPN Bipolar Junction Transistor
Subcategory: Single NPN

DZT491-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL Level 1
REACH Status: REACH Unaffected
Lead Free: Yes

DZT491-13 Estimated Pricing

Qty Low High
2,500+ $0.14 $0.14
5,000+ $0.13 $0.13
7,500+ $0.12 $0.12
12,500+ $0.12 $0.12
17,500+ $0.11 $0.11
25,000+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

DZT491-13 Features

  • NPN epitaxial planar die construction.
  • Rated for 60V collector-emitter voltage.
  • Supports 1A continuous collector current.
  • 150 MHz minimum current gain-bandwidth product.
  • Surface mount SOT-223-3 package.

DZT491-13 Applications

  • Medium power switching circuits.
  • Linear amplification applications.
  • Automated assembly processes.
  • Complementary PNP pair with DZT591C.

DZT491-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the DZT491-13?

The maximum collector-emitter voltage (VCEO) is 60V.

What is the maximum continuous collector current rating?

The maximum continuous collector current (IC) is 1A, with a peak current (ICM) of 2A.

What package is the DZT491-13 available in?

The DZT491-13 is available in a surface-mount SOT-223 package (also known as TO-261AA), with a supplier device package of SOT-223-3.

What is the operating temperature range of this transistor?

The operating junction temperature range (TJ) is -55°C to 150°C.

Is the DZT491-13 RoHS compliant?

Yes, the DZT491-13 is RoHS3 compliant and lead-free by design.

What is the DC current gain (hFE) of the DZT491-13?

The DC current gain (hFE) is 100 minimum at Ic=500mA and Vce=5V, and ranges from 100 to 300 at Ic=1mA and Vce=5V.

What is the current gain-bandwidth product (fT) of this transistor?

The current gain-bandwidth product (fT) is 150 MHz minimum at Vce=10V and Ic=50mA.

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