| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
243,520 pcs
|
243520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DXT751-13 is a PNP bipolar junction transistor from Diodes Incorporated, designed for medium power switching and amplification applications. It features epitaxial planar die construction for reliable performance and is ideally suited for automated assembly processes.
Key electrical specifications include a minimum collector-emitter breakdown voltage of -60V, a continuous collector current rating of -3A, and a peak pulse current of -6A. The transistor offers low collector-emitter saturation voltage, typically -0.2V at 1A and -0.6V at 3A, and high DC current gain with a minimum hFE of 100 at 500mA. The transition frequency is 100-145 MHz, making it suitable for moderate speed switching.
The device is packaged in a surface-mount SOT89-3 case (TO-243AA) with matte tin annealed terminals over a copper leadframe. It is lead-free by design and RoHS3 compliant. The operating junction temperature range is -55°C to 150°C, and the power dissipation is 1W when mounted on FR-4 PCB. A complementary NPN type, DXT651, is also available.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.04 | $1.04 |
| 10+ | $0.64 | $0.64 |
| 100+ | $0.42 | $0.42 |
| 500+ | $0.32 | $0.32 |
| 1,000+ | $0.25 | $0.25 |
| 2,500+ | $0.21 | $0.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (VCEO) is -60V.
The DXT751-13 is available in a surface-mount SOT89-3 package (TO-243AA).
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and lead-free by design per the datasheet.
The minimum hFE is 100 at 500mA and 2V, with typical values ranging from 70 to 300 at 50mA.
Maximum VCE(sat) is -0.2V at 1A and -0.6V at 3A.
The maximum continuous collector current is -3A.