| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,524 pcs
|
2524 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DU2860U is an N-Channel Enhancement Mode DMOS RF Power MOSFET transistor manufactured by MACOM Technology Solutions. It features a DMOS structure that provides lower capacitances for broadband operation, high saturated output power, and a lower noise figure than bipolar devices. The device is RoHS compliant.
Key electrical specifications include a maximum drain-source voltage of 65 V, gate-source voltage of 20 V, continuous drain current of 12 A, and power dissipation of 159 W. The junction temperature rating is 200 °C.
Designed for RF power amplification, the DU2860U operates over a frequency range of 2 to 175 MHz with a nominal output power of 60 W at 28 V drain supply. It achieves a minimum power gain of 13 dB and a minimum drain efficiency of 60%. The device can withstand a load mismatch of 30:1.
The transistor is offered in a through-hole package with leads for mounting. It is suitable for a variety of RF power applications including communications, industrial, and defense systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $181.75 | $181.75 |
| 10+ | $154.59 | $154.59 |
| 20+ | $153.38 | $153.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The recommended drain supply voltage is 28 V.
The maximum junction temperature is 200 °C, and the storage temperature range is -55 to +150 °C.
Yes, the DU2860U is RoHS compliant.
The nominal output power is 60 W.
The frequency range is 2 to 175 MHz.
The minimum power gain is 13 dB.
The minimum drain efficiency is 60%.