DU2860U The DU2860U is an N-Channel Enhancement Mode DMOS RF Power MOSFET transistor from MACOM. It delivers 60W output power at 28V over 2-175 MHz.
Mfr Part #:

DU2860U

Available from 1 distributors
Mfr Name: MACOM Technology Solutions
MACOM Technology Solutions
The DU2860U is an N-Channel Enhancement Mode DMOS RF Power MOSFET transistor from MACOM. It delivers 60W output power at 28V over 2-175 MHz.
Total Stock: 2,524 pcs
$ Price Range: $153.38 - $181.75

DU2860U Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,524 pcs
2524 pcs On Request 1 On Request On Request On Request On Request On Request

DU2860U Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Approval Agency
Frequency Range
Input Capacitance
Junction Temperature
Medical Grade
Output Power
Power Dissipation
SVHC Present
Storage Temperature
Transistor Type

DU2860U Description

Short technical summary and product information.

The DU2860U is an N-Channel Enhancement Mode DMOS RF Power MOSFET transistor manufactured by MACOM Technology Solutions. It features a DMOS structure that provides lower capacitances for broadband operation, high saturated output power, and a lower noise figure than bipolar devices. The device is RoHS compliant.

 

Key electrical specifications include a maximum drain-source voltage of 65 V, gate-source voltage of 20 V, continuous drain current of 12 A, and power dissipation of 159 W. The junction temperature rating is 200 °C.

 

Designed for RF power amplification, the DU2860U operates over a frequency range of 2 to 175 MHz with a nominal output power of 60 W at 28 V drain supply. It achieves a minimum power gain of 13 dB and a minimum drain efficiency of 60%. The device can withstand a load mismatch of 30:1.

 

The transistor is offered in a through-hole package with leads for mounting. It is suitable for a variety of RF power applications including communications, industrial, and defense systems.

DU2860U Quick Information

Product Type: RF Power MOSFET Transistor
Canonical Name: RF Power MOSFET Transistor, 60W, 28V, 2-175MHz, N-Channel Enhancement Mode DMOS
Subcategory: Transistors - FETs, MOSFETs - RF

DU2860U Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DU2860U Estimated Pricing

Qty Low High
1+ $181.75 $181.75
10+ $154.59 $154.59
20+ $153.38 $153.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

DU2860U Features

  • N-channel enhancement mode DMOS structure.
  • Lower capacitances enable broadband operation.
  • High saturated output power of 60W.
  • RoHS compliant for environmental compliance.
  • Lower noise figure than bipolar devices.

DU2860U Applications

  • Used in RF power amplifiers for communications.
  • Suitable for broadband transmitter designs.
  • Ideal for industrial, scientific, and medical RF applications.
  • Deployed in defense and aerospace radio systems.

DU2860U FAQs

7 frequently asked questions generated from this part’s specifications.
What is the recommended drain supply voltage for the DU2860U?

The recommended drain supply voltage is 28 V.

What is the operating temperature range of the DU2860U?

The maximum junction temperature is 200 °C, and the storage temperature range is -55 to +150 °C.

Is the DU2860U RoHS compliant?

Yes, the DU2860U is RoHS compliant.

What is the output power of the DU2860U?

The nominal output power is 60 W.

What is the frequency range of the DU2860U?

The frequency range is 2 to 175 MHz.

What is the power gain of the DU2860U?

The minimum power gain is 13 dB.

What is the drain efficiency of the DU2860U?

The minimum drain efficiency is 60%.

Home
Account

Categories