| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Approval Agency | |
| Frequency Range | |
| Input Capacitance | |
| Junction Temperature | |
| Medical Grade | |
| Output Power | |
| Power Dissipation | |
| Storage Temperature | |
| Transistor Type |
The DU2840S is a 40W RF power MOSFET transistor designed for broadband operation from 2 to 175 MHz. It utilizes an N-channel enhancement mode DMOS structure, which provides lower capacitances for wideband performance and high saturated output power. The device is rated for 28V operation with a quiescent current of 200 mA. Key electrical characteristics include a minimum power gain of 13 dB and a minimum drain efficiency of 60% at 40W output power and 175 MHz. The transistor can withstand a load mismatch of 30:1 VSWR, making it robust for demanding RF applications. It is RoHS compliant and has a junction temperature rating of 200°C with a thermal resistance of 1.4°C/W. The DU2840S is suitable for use in RF power amplifiers, broadcast transmitters, and industrial RF heating applications.
| Qty | Low | High |
|---|---|---|
| 120+ | $145.96 | $145.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical drain supply voltage is 28V.
40W.
2 to 175 MHz.
Minimum 13 dB at 175 MHz.
Minimum 60% at 40W output and 175 MHz.
-55 to 150°C.
Yes, the datasheet states RoHS compliant.