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DTD143EKT146 The DTD143EKT146 is an NPN pre-biased transistor from ROHM Semiconductor. It features 50V collector-emitter voltage, 500mA collector current, and 200mW power dissipation in a SMT3 surface-mount package.
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DTD143EKT146

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The DTD143EKT146 is an NPN pre-biased transistor from ROHM Semiconductor. It features 50V collector-emitter voltage, 500mA collector current, and 200mW power dissipation in a SMT3 surface-mount package.
✓ Total Stock: 3,205 pcs
$ Price Range: $0.13 - $1.24

DTD143EKT146 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
3,205 pcs
On Request
3205 pcs On Request 1 On Request On Request 1216+ On Request On Request
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DTD143EKT146 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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DTD143EKT146 Description

Short technical summary and product information.

The DTD143EKT146 is an NPN pre-biased bipolar junction transistor manufactured by ROHM Semiconductor. It integrates a bias resistor (R1 = 4.7kΩ) internally, simplifying circuit design by reducing external component count. The transistor is designed for general-purpose switching and amplification applications in low-power circuits.

 

Key electrical specifications include a maximum collector-emitter voltage (Vce) of 50V, a maximum collector current (Ic) of 500mA, and a maximum power dissipation of 200mW. The DC current gain (hFE) is a minimum of 47 at Ic=50mA and Vce=5V, with a typical transition frequency (fT) of 200MHz. The collector-emitter saturation voltage is 300mV maximum at Ib=2.5mA and Ic=50mA.

 

The DTD143EKT146 is offered in a TO-236-3 (SC-59, SOT-23-3) surface-mount package, with a supplier device package designation of SMT3. It is suitable for automated assembly and space-constrained designs.

DTD143EKT146 Quick Information

Product Type: Pre-Biased NPN Bipolar Junction Transistor
Canonical Name: DTD143EKT146 NPN Pre-Biased Transistor
Subcategory: Single Pre-Biased BJT

DTD143EKT146 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DTD143EKT146 Estimated Pricing

Qty Low High
1+ $1.24 $1.24
10+ $0.86 $0.86
100+ $0.55 $0.55
500+ $0.34 $0.34
1,000+ $0.25 $0.25
3,000+ $0.22 $0.22
6,000+ $0.19 $0.19
9,000+ $0.17 $0.17
24,000+ $0.13 $0.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTD143EKT146 Features

  • NPN pre-biased transistor with internal 4.7kΩ resistor.
  • Rated for 50V collector-emitter voltage maximum.
  • Capable of 500mA continuous collector current.
  • 200mW power dissipation in SMT3 package.
  • Minimum DC current gain of 47 at 50mA.

DTD143EKT146 Applications

  • General purpose switching and amplification circuits.
  • Low-power signal processing in consumer electronics.
  • Used in automated surface-mount assembly applications.

DTD143EKT146 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the DTD143EKT146?

The maximum collector-emitter voltage (Vce) is 50V.

What package does the DTD143EKT146 come in?

The DTD143EKT146 is available in TO-236-3, SC-59, and SOT-23-3 surface-mount packages, with supplier device package SMT3.

Is the DTD143EKT146 RoHS compliant?

The DTD143EKT146 is listed as RoHS3 compliant, but this information is unverified.

What is the maximum collector current of the DTD143EKT146?

The maximum collector current (Ic) is 500mA.

What is the minimum DC current gain (hFE) of the DTD143EKT146?

The minimum DC current gain is 47 at Ic=50mA and Vce=5V.

What is the power dissipation rating of the DTD143EKT146?

The maximum power dissipation is 200mW.

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