DTD123TKT146

The DTD123TKT146 from ROHM Semiconductor is an NPN pre-biased digital transistor (BJT) with built-in thin-film bias resistors. It is designed to simplify circuit design by eliminating the need for external resistor components, enabling direct interface with microcontroller outputs. Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 40V, a maximum collector current of 500mA, and a DC current gain (hFE) ranging from 100 to 600 at 50mA, 5V. The built-in input resistor R1 has a nominal value of 2.2kΩ with tolerances of -30% to +30% (min 1.54kΩ, max 2.86kΩ). The transistor offers a typical transition frequency of 200MHz, suitable for switching applications up to moderate frequencies. Power dissipation is rated at 200mW at 25°C ambient temperature. The device is housed in a surface-mount SOT-346 (SMT3 / SOT-23-3) package with a compact 2928 size, supplied on tape-and-reel with 3000 pieces per reel. This digital transistor is ideal for use in inverters, interface circuits, and driver stages where space and component count reduction are critical. The built-in resistors allow negative biasing of the input due to complete isolation of the thin-film resistors, almost eliminating parasitic effects. Operating and storage temperature range is -55°C to +150°C.