| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
134,740 pcs
|
134740 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ROHM DTC143EKAT146 is an NPN pre-biased digital transistor (also known as a bias resistor built-in transistor) from the DTC143E series. It integrates two 4.7kΩ bias resistors (R1 and R2), eliminating the need for external resistors in inverter and interface circuits. This simplifies PCB layout and reduces component count.
Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 50V, a maximum collector current of 100mA, and a power dissipation of 200mW. The device offers a typical transition frequency of 250MHz and a minimum DC current gain (hFE) of 30 at 10mA, 5V. It is designed for surface-mount assembly in an SMT3 (SOT-346) package and is supplied in tape and reel packaging with 3000 pieces per reel.
Typical applications include inverters, interface circuits, and driver stages where simple on/off control is required. The built-in resistors ensure consistent switching performance and reduce design effort.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
| 10+ | $0.15 | $0.15 |
| 100+ | $0.09 | $0.09 |
| 500+ | $0.07 | $0.07 |
| 1,000+ | $0.06 | $0.06 |
| 3,000+ | $0.05 | $0.05 |
| 6,000+ | $0.04 | $0.04 |
| 9,000+ | $0.03 | $0.03 |
| 24,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50V.
The maximum collector current (IC) is 100mA.
It is supplied in an SMT3 (SOT-346) surface-mount package.
Yes, it integrates two 4.7kΩ bias resistors (R1 and R2).
The maximum power dissipation is 200mW.
The typical transition frequency (ft) is 250MHz at VCE=10V, IE=-5mA, f=100MHz.
The minimum hFE is 30 at Ic=10mA, Vce=5V.