DTC124GUAT106 NPN pre-biased transistor from ROHM Semiconductor. Features 50V collector-emitter breakdown voltage, 100mA collector current, and 200mW power dissipation in a UMT3 surface mount package.
Mfr Part #:

DTC124GUAT106

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
NPN pre-biased transistor from ROHM Semiconductor. Features 50V collector-emitter breakdown voltage, 100mA collector current, and 200mW power dissipation in a UMT3 surface mount package.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.04 - $0.26

DTC124GUAT106 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 1207+ On Request On Request

DTC124GUAT106 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTC124GUAT106 Description

Short technical summary and product information.

The DTC124GUAT106 is an NPN pre-biased transistor manufactured by ROHM Semiconductor. It integrates a bias resistor (R1 = 22 kΩ) in the base circuit, simplifying circuit design by reducing external component count. Key electrical specifications include a collector-emitter breakdown voltage of 50 V, a maximum collector current of 100 mA, and a power dissipation of 200 mW. The transistor offers a DC current gain (hFE) of minimum 56 at Ic=5mA, Vce=5V, and a transition frequency of 250 MHz. The saturation voltage is 300 mV maximum at Ib=500µA, Ic=10mA. The device is housed in a surface-mount UMT3 package (SC-70, SOT-323), suitable for compact PCB layouts. It is designed for general-purpose switching and amplification applications where space and component count are critical.

DTC124GUAT106 Quick Information

Product Type: Pre-Biased NPN Transistor
Canonical Name: NPN Pre-Biased Transistor
Subcategory: Single, Pre-Biased

DTC124GUAT106 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DTC124GUAT106 Estimated Pricing

Qty Low High
1+ $0.26 $0.26
10+ $0.16 $0.16
100+ $0.10 $0.10
500+ $0.07 $0.07
1,000+ $0.06 $0.06
3,000+ $0.06 $0.06
6,000+ $0.06 $0.06
9,000+ $0.04 $0.04
24,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC124GUAT106 Features

  • NPN pre-biased transistor with integrated base resistor.
  • Rated for 50V collector-emitter breakdown voltage.
  • Maximum collector current of 100 mA.
  • Power dissipation of 200 mW.
  • Surface mount UMT3 package for compact designs.

DTC124GUAT106 Applications

  • Used in general-purpose switching circuits.
  • Ideal for signal amplification in portable devices.
  • Suitable for low-power driver applications.
  • Reduces component count in bias networks.

DTC124GUAT106 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the DTC124GUAT106?

The collector-emitter breakdown voltage (VCEO) is 50 V.

What is the maximum collector current?

The maximum collector current (Ic) is 100 mA.

What is the power dissipation of this transistor?

The maximum power dissipation is 200 mW.

What is the value of the integrated base resistor?

The base resistor (R1) is 22 kΩ.

What is the DC current gain (hFE) of the DTC124GUAT106?

The minimum DC current gain is 56 at Ic=5mA, Vce=5V.

What package is the DTC124GUAT106 available in?

It is available in a surface-mount UMT3 package, which is equivalent to SC-70 and SOT-323.

Is the DTC124GUAT106 RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified.

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