DTC123JUBTL The DTC123JUBTL is an NPN pre-biased transistor from ROHM Semiconductor. It features a 50V collector-emitter breakdown voltage, 100mA collector current, and 200mW power dissipation in a UMT3F surface-mount package.
Mfr Part #:

DTC123JUBTL

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The DTC123JUBTL is an NPN pre-biased transistor from ROHM Semiconductor. It features a 50V collector-emitter breakdown voltage, 100mA collector current, and 200mW power dissipation in a UMT3F surface-mount package.
✓ Total Stock: 10,000 pcs
$ Price Range: $0.03 - $0.20

DTC123JUBTL Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,100 pcs
7100 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
2,900 pcs
2900 pcs On Request 1 On Request On Request 13+ On Request On Request

DTC123JUBTL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTC123JUBTL Description

Short technical summary and product information.

The DTC123JUBTL is an NPN pre-biased bipolar junction transistor manufactured by ROHM Semiconductor. It integrates a 47 kΩ base resistor (R1), simplifying circuit design by reducing external component count. The transistor is rated for a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation limit of 200mW.

 

Electrical characteristics include a minimum DC current gain (hFE) of 80 at Ic=10mA and Vce=5V, and a maximum Vce saturation voltage of 300mV at Ib=250µA and Ic=5mA. The transition frequency is 250MHz, making it suitable for switching and amplification applications in low-power circuits.

 

The device is housed in an SC-85 package with a UMT3F supplier device package, designed for surface-mount assembly. This compact package is well-suited for space-constrained PCB designs in consumer electronics and portable devices.

DTC123JUBTL Quick Information

Product Type: Pre-Biased Bipolar Junction Transistor
Canonical Name: NPN Pre-Biased Transistor
Subcategory: Single, Pre-Biased

DTC123JUBTL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DTC123JUBTL Estimated Pricing

Qty Low High
1+ $0.20 $0.20
10+ $0.12 $0.12
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.05 $0.05
3,000+ $0.04 $0.04
6,000+ $0.03 $0.03
9,000+ $0.03 $0.03
24,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC123JUBTL Features

  • NPN pre-biased transistor with integrated base resistor.
  • Rated for 50V collector-emitter breakdown voltage.
  • Supports 100mA maximum collector current.
  • 200mW power dissipation in UMT3F package.
  • 250MHz transition frequency for switching applications.

DTC123JUBTL Applications

  • Ideal for low-power switching circuits.
  • Used in signal amplification stages.
  • Suitable for portable electronic devices.
  • Common in consumer electronics designs.

DTC123JUBTL FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the DTC123JUBTL?

The maximum collector-emitter breakdown voltage is 50V.

What is the maximum collector current of the DTC123JUBTL?

The maximum collector current is 100mA.

What is the power dissipation rating of the DTC123JUBTL?

The maximum power dissipation is 200mW.

What is the package type of the DTC123JUBTL?

The DTC123JUBTL is available in an SC-85 package with a UMT3F supplier device package, designed for surface-mount mounting.

What is the base resistor value in the DTC123JUBTL?

The base resistor (R1) is 47 kΩ.

What is the DC current gain (hFE) of the DTC123JUBTL?

The minimum DC current gain (hFE) is 80 at Ic=10mA and Vce=5V.

What is the transition frequency of the DTC123JUBTL?

The transition frequency is 250MHz.

DTC123JUBTL Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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ROHM Semiconductor
NPN pre-biased transistor from ROHM Semiconductor. Features 200 mW power dissipation, 50 V collector-emitter breakdown voltage, and 100 mA collector current in a surface-mount SC-85 package.
View Part
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