DTC123JM3T5G The DTC123JM3T5G is an NPN pre-biased digital transistor from On Semiconductor with integrated bias resistors R1=2.2kΩ and R2=47kΩ. Rated for 50V collector-emitter voltage and 100mA collector current, it comes in a SOT-723 surface-mount package.
Mfr Part #:

DTC123JM3T5G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The DTC123JM3T5G is an NPN pre-biased digital transistor from On Semiconductor with integrated bias resistors R1=2.2kΩ and R2=47kΩ. Rated for 50V collector-emitter voltage and 100mA collector current, it comes in a SOT-723 surface-mount package.
Total Stock: 162,838 pcs
$ Price Range: $0.04 - $0.26

DTC123JM3T5G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
158,650 pcs
158650 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,188 pcs
4188 pcs On Request 1 On Request On Request 12+ On Request On Request

DTC123JM3T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Resistor - Base (R1)
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTC123JM3T5G Description

Short technical summary and product information.

The DTC123JM3T5G is an NPN pre-biased digital transistor (BRT) manufactured by On Semiconductor. It integrates a monolithic bias resistor network comprising a series base resistor R1 of 2.2 kΩ and a base-emitter resistor R2 of 47 kΩ, which eliminates the need for external resistors in switching applications. This device simplifies circuit design, reduces board space, and lowers component count.

 

Key electrical characteristics include a maximum collector-emitter breakdown voltage of 50 V, a continuous collector current of 100 mA, and a DC current gain (hFE) of 80 minimum at Ic=5mA, Vce=10V. The saturation voltage is typically 250 mV at Ib=1mA, Ic=10mA. The device also supports a collector-base voltage of 50 V and input forward/reverse voltages of 12 V and 6 V respectively. Maximum power dissipation is 260 mW.

 

This BRT is housed in a compact SOT-723 surface-mount package, making it ideal for space-constrained designs. It is supplied in tape and reel packaging for automated assembly. The part is listed as RoHS3 compliant and has an MSL rating of 1 (unlimited floor life).

 

Typical applications include low-power switching, inverter circuits, and interface circuits in consumer electronics and industrial controls. The integrated bias network reduces external component count and simplifies PCB layout.

DTC123JM3T5G Quick Information

Product Type: Pre-Biased NPN Bipolar Transistor
Series: DTC123J
Canonical Name: NPN Pre-Biased Digital Transistor (BRT)
Subcategory: Single, Pre-Biased

DTC123JM3T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DTC123JM3T5G Estimated Pricing

Qty Low High
1+ $0.26 $0.26
10+ $0.16 $0.16
100+ $0.10 $0.10
500+ $0.07 $0.07
1,000+ $0.06 $0.06
2,000+ $0.06 $0.06
8,000+ $0.04 $0.04
16,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC123JM3T5G Features

  • Integrated bias resistors R1=2.2kΩ, R2=47kΩ.
  • Rated for 50V collector-emitter breakdown voltage.
  • Supports 100mA continuous collector current.
  • Compact SOT-723 surface-mount package.
  • RoHS3 compliant and MSL 1 rated.

DTC123JM3T5G Applications

  • Ideal for low-power switching circuits.
  • Used in interface and inverter circuits.
  • Reduces component count in bias networks.
  • Suitable for space-constrained PCB designs.

DTC123JM3T5G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the DTC123JM3T5G?

The maximum collector-emitter breakdown voltage is 50 V.

What is the package type of the DTC123JM3T5G?

It is housed in an SOT-723 surface-mount package.

Is the DTC123JM3T5G RoHS compliant?

According to the datasheet, it is RoHS3 compliant. Verification of official documentation is recommended.

What is the maximum collector current of the DTC123JM3T5G?

The maximum continuous collector current is 100 mA.

What are the integrated resistor values in the DTC123JM3T5G?

The base resistor R1 is 2.2 kΩ and the base-emitter resistor R2 is 47 kΩ.

What is the DC current gain (hFE) of the DTC123JM3T5G?

The minimum DC current gain is 80 at Ic=5mA, Vce=10V.

What is the maximum power dissipation of the DTC123JM3T5G?

The maximum power dissipation is 260 mW.

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