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DTC123JEBTL The DTC123JEBTL is an NPN pre-biased transistor from ROHM Semiconductor. It features 150 mW power dissipation, 100 mA collector current, and 50 V collector-emitter breakdown voltage.
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DTC123JEBTL

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The DTC123JEBTL is an NPN pre-biased transistor from ROHM Semiconductor. It features 150 mW power dissipation, 100 mA collector current, and 50 V collector-emitter breakdown voltage.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.03 - $0.24

DTC123JEBTL Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request 17+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DTC123JEBTL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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DTC123JEBTL Description

Short technical summary and product information.

The DTC123JEBTL is an NPN pre-biased bipolar junction transistor manufactured by ROHM Semiconductor. It integrates a 47 kΩ base resistor (R1) and is designed for surface-mount applications. The device is rated for a power dissipation of 150 mW and a collector current of 100 mA, with a collector-emitter breakdown voltage of 50 V.

 

The transistor offers a minimum DC current gain (hFE) of 80 at Ic=10 mA and Vce=5 V, and a maximum collector-emitter saturation voltage of 300 mV at Ib=250 µA and Ic=5 mA. The transition frequency is 250 MHz, making it suitable for switching and amplification in low-power circuits.

 

The DTC123JEBTL is housed in the SC-89 (SOT-490) package, with the supplier device package EMT3F (SOT-416FL). It is surface-mountable, which facilitates compact PCB designs. The integrated bias resistor reduces external component count, simplifying circuit design.

DTC123JEBTL Quick Information

Product Type: Pre-Biased Transistor
Canonical Name: NPN Pre-Biased Transistor
Subcategory: Single, Pre-Biased

DTC123JEBTL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DTC123JEBTL Estimated Pricing

Qty Low High
1+ $0.24 $0.24
10+ $0.15 $0.15
100+ $0.09 $0.09
500+ $0.07 $0.07
1,000+ $0.06 $0.06
3,000+ $0.05 $0.05
6,000+ $0.04 $0.04
9,000+ $0.04 $0.04
24,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC123JEBTL Features

  • NPN pre-biased transistor with integrated resistor.
  • Rated for 150 mW power dissipation.
  • Supports 100 mA collector current.
  • 50 V collector-emitter breakdown voltage.
  • Surface-mount SC-89 package.

DTC123JEBTL Applications

  • Used in low-power switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for compact surface-mount designs.
  • Reduces component count with built-in resistor.

DTC123JEBTL FAQs

6 frequently asked questions generated from this part’s specifications.
What is the power dissipation rating of the DTC123JEBTL?

The DTC123JEBTL has a power dissipation rating of 150 mW.

What is the collector current rating of the DTC123JEBTL?

The collector current rating is 100 mA.

What is the collector-emitter breakdown voltage of the DTC123JEBTL?

The collector-emitter breakdown voltage is 50 V.

What is the base resistor value in the DTC123JEBTL?

The base resistor (R1) is 47 kΩ.

What is the package type of the DTC123JEBTL?

The DTC123JEBTL is available in the SC-89 (SOT-490) package, with supplier device package EMT3F (SOT-416FL).

What is the transition frequency of the DTC123JEBTL?

The transition frequency is 250 MHz.

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