DTC123EMT2L The DTC123EMT2L is an NPN pre-biased transistor from ROHM Semiconductor. It features a 50V collector-emitter breakdown voltage, 100mA collector current, 150mW power dissipation, and a built-in 2.2kΩ base resistor.
Mfr Part #:

DTC123EMT2L

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The DTC123EMT2L is an NPN pre-biased transistor from ROHM Semiconductor. It features a 50V collector-emitter breakdown voltage, 100mA collector current, 150mW power dissipation, and a built-in 2.2kΩ base resistor.
✓ Total Stock: 4,323 pcs
$ Price Range: $0.07 - $0.45

DTC123EMT2L Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,323 pcs
4323 pcs On Request 1 On Request On Request 17+ On Request On Request

DTC123EMT2L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTC123EMT2L Description

Short technical summary and product information.

The DTC123EMT2L is an NPN pre-biased transistor manufactured by ROHM Semiconductor. It integrates a bias resistor (R1 = 2.2 kΩ) in a single SOT-723 surface-mount package, reducing external component count and simplifying circuit design.

 

Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 50V, a continuous collector current (Ic) of 100mA, and a power dissipation (Pd) of 150mW. The device offers a DC current gain (hFE) of at least 20 at 20mA, 5V, and a transition frequency (ft) of 250MHz. The collector-emitter saturation voltage (Vce(sat)) is 300mV maximum at 500µA base current and 10mA collector current.

 

This transistor is housed in a compact SOT-723 package (also designated VMT3), suitable for space-constrained surface-mount applications. The pre-biased configuration makes it ideal for switching and amplifier circuits where consistent biasing is required.

DTC123EMT2L Quick Information

Product Type: Pre-Biased Bipolar Transistor
Canonical Name: DTC123EMT2L NPN Pre-Biased Transistor
Subcategory: Single, Pre-Biased

DTC123EMT2L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DTC123EMT2L Estimated Pricing

Qty Low High
1+ $0.45 $0.45
10+ $0.28 $0.28
100+ $0.18 $0.18
500+ $0.13 $0.13
1,000+ $0.11 $0.11
5,000+ $0.08 $0.08
8,000+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC123EMT2L Features

  • NPN pre-biased transistor with 2.2kΩ base resistor
  • Rated for 50V collector-emitter breakdown voltage
  • Supports 100mA continuous collector current
  • 150mW power dissipation capability
  • Compact SOT-723 surface-mount package

DTC123EMT2L Applications

  • Ideal for switching and amplifier circuits
  • Reduces external component count in designs
  • Suitable for portable and space-limited electronics
  • Used in general-purpose signal processing

DTC123EMT2L FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage (Vceo) of the DTC123EMT2L?

The collector-emitter breakdown voltage (Vceo) is 50V.

What is the maximum collector current (Ic) for this transistor?

The maximum continuous collector current (Ic) is 100mA.

What package does the DTC123EMT2L come in?

The DTC123EMT2L is available in a SOT-723 surface-mount package, also designated as VMT3.

Is the DTC123EMT2L RoHS compliant?

The DTC123EMT2L is listed as RoHS compliant, though this information is unverified.

What is the value of the built-in base resistor (R1)?

The built-in base resistor (R1) is 2.2 kΩ.

What is the transition frequency (ft) of the DTC123EMT2L?

The transition frequency (ft) is 250 MHz.

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