DTC123EM3T5G The DTC123EM3T5G is an NPN pre-biased digital transistor from onsemi, rated for 50V collector-emitter voltage and 100mA continuous collector current. It integrates a 2.2kΩ base resistor and 2.2kΩ base-emitter resistor in a surface-mount SOT-723 package.
Mfr Part #:

DTC123EM3T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The DTC123EM3T5G is an NPN pre-biased digital transistor from onsemi, rated for 50V collector-emitter voltage and 100mA continuous collector current. It integrates a 2.2kΩ base resistor and 2.2kΩ base-emitter resistor in a surface-mount SOT-723 package.
✓ Total Stock: 1,424,000 pcs
$ Price Range: $0.04 - $0.26

DTC123EM3T5G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,424,000 pcs
1424000 pcs On Request 1 On Request On Request On Request On Request On Request

DTC123EM3T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Power
Resistor
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTC123EM3T5G Description

Short technical summary and product information.

The DTC123EM3T5G is an NPN pre-biased digital transistor, also known as a Bias Resistor Transistor (BRT), from onsemi. It integrates a monolithic bias network consisting of a series base resistor (R1) and a base-emitter resistor (R2), both rated at 2.2kΩ. This integration simplifies circuit design by eliminating external bias components, reducing board space and component count.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V, a maximum collector-base voltage (VCBO) of 50V, and a continuous collector current (IC) of 100mA. The device has a minimum DC current gain (hFE) of 8 at Ic=5mA and Vce=10V, and a maximum Vce saturation voltage of 250mV at Ib=5mA and Ic=10mA. Maximum power dissipation is 260mW.

 

The DTC123EM3T5G is housed in a surface-mount SOT-723 package, suitable for compact PCB layouts. It is Pb-free, halogen-free/BFR-free, and RoHS compliant, making it suitable for environmentally conscious designs.

DTC123EM3T5G Quick Information

Product Type: Digital Transistor (Bias Resistor Transistor)
Series: DTC123E
Canonical Name: NPN Pre-Biased Digital Transistor (BRT) with R1=2.2kΩ, R2=2.2kΩ
Subcategory: Pre-Biased Digital Transistor

DTC123EM3T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DTC123EM3T5G Estimated Pricing

Qty Low High
1+ $0.26 $0.26
10+ $0.16 $0.16
100+ $0.10 $0.10
500+ $0.07 $0.07
1,000+ $0.06 $0.06
5,000+ $0.04 $0.04
8,000+ $0.04 $0.04
24,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC123EM3T5G Features

  • Integrated 2.2kΩ base and emitter resistors.
  • Rated for 50V collector-emitter voltage.
  • Supports 100mA continuous collector current.
  • Surface-mount SOT-723 package.
  • Pb-free and RoHS compliant.

DTC123EM3T5G Applications

  • Ideal for switching and amplification circuits.
  • Reduces component count in bias networks.
  • Suitable for compact PCB designs.
  • Used in consumer and industrial electronics.

DTC123EM3T5G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the DTC123EM3T5G?

The maximum collector-emitter voltage (VCEO) is 50V.

What is the maximum continuous collector current of the DTC123EM3T5G?

The maximum continuous collector current is 100mA.

What is the package type of the DTC123EM3T5G?

The DTC123EM3T5G is available in a surface-mount SOT-723 package.

Is the DTC123EM3T5G RoHS compliant?

Yes, the DTC123EM3T5G is RoHS compliant (RoHS3).

What are the values of the integrated bias resistors in the DTC123EM3T5G?

The integrated base resistor (R1) and base-emitter resistor (R2) are both 2.2kΩ.

What is the maximum power dissipation of the DTC123EM3T5G?

The maximum power dissipation is 260mW.

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