DTC115TM3T5G The DTC115TM3T5G is an NPN pre-biased digital transistor from On Semiconductor, featuring a 50V collector-emitter voltage, 100mA collector current, and 260mW power dissipation. It integrates a 100kΩ base resistor and is housed in a SOT-723 surface mount package, RoHS compliant.
Mfr Part #:

DTC115TM3T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The DTC115TM3T5G is an NPN pre-biased digital transistor from On Semiconductor, featuring a 50V collector-emitter voltage, 100mA collector current, and 260mW power dissipation. It integrates a 100kΩ base resistor and is housed in a SOT-723 surface mount package, RoHS compliant.
✓ Total Stock: 544,500 pcs
$ Price Range: $0.06 - $0.32

DTC115TM3T5G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
544,500 pcs
544500 pcs On Request 1 On Request On Request On Request On Request On Request

DTC115TM3T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Lead Style
Mounting Type
Power
Resistor
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTC115TM3T5G Description

Short technical summary and product information.

The DTC115TM3T5G is an NPN pre-biased digital transistor (Bias Resistor Transistor - BRT) from onsemi, designed to replace a discrete transistor and its external bias resistors. It integrates a series base resistor (R1 = 100 kΩ) and a base-emitter resistor, simplifying circuit design and reducing board space.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, continuous collector current (IC) of 100 mA, and power dissipation of 260 mW. The DC current gain (hFE) is a minimum of 160 at IC=5 mA, VCE=10 V. Collector-emitter saturation voltage is typically 250 mV at IB=5 mA, IC=10 mA.

 

This device is housed in a SOT-723 surface mount package with a supplier device package of SOT-723. It is designed for automatic insertion and is available in tape and reel packaging with a standard quantity of 8000 per reel. The component is Pb-Free, Halogen Free/BFR Free, and RoHS3 compliant, making it suitable for environmentally conscious designs.

DTC115TM3T5G Quick Information

Product Type: Pre-Biased Bipolar Junction Transistor (BJT)
Canonical Name: NPN Pre-Biased Digital Transistor (BRT) with 100kΩ Base Resistor
Subcategory: NPN Pre-Biased Digital Transistor

DTC115TM3T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DTC115TM3T5G Estimated Pricing

Qty Low High
1+ $0.32 $0.32
10+ $0.26 $0.26
5,000+ $0.06 $0.06
8,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC115TM3T5G Features

  • NPN pre-biased digital transistor with integrated resistor.
  • Rated for 50V collector-emitter voltage.
  • 100mA continuous collector current.
  • 260mW power dissipation capability.
  • RoHS3 compliant Pb-Free Halogen Free.

DTC115TM3T5G Applications

  • Simplifies circuit design by eliminating external resistors.
  • Ideal for space-constrained portable electronics.
  • Used in general-purpose switching applications.
  • Suitable for low-power interface circuits.

DTC115TM3T5G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

50V.

What package is the DTC115TM3T5G available in?

SOT-723 surface mount package.

Is the DTC115TM3T5G RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free.

What is the base resistor value?

R1 is 100 kΩ.

What is the DC current gain (hFE)?

Minimum 160 at Ic=5mA, Vce=10V.

What is the maximum collector current?

100 mA.

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