DTC115TET1G NPN pre-biased digital transistor (BRT) with integrated 100kΩ base resistor. Rated for 50V collector-emitter voltage and 100mA continuous current.
Mfr Part #:

DTC115TET1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN pre-biased digital transistor (BRT) with integrated 100kΩ base resistor. Rated for 50V collector-emitter voltage and 100mA continuous current.
Total Stock: 273,000 pcs
$ Price Range: $0.03 - $0.20

DTC115TET1G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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273,000 pcs
273000 pcs On Request 1 On Request On Request On Request On Request On Request

DTC115TET1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTC115TET1G Description

Short technical summary and product information.

The DTC115TET1G is an NPN pre-biased digital transistor, also known as a Bias Resistor Transistor (BRT), from onsemi. It integrates a monolithic bias network consisting of a series base resistor (R1 = 100 kΩ) directly into the transistor, eliminating the need for external biasing components. This simplifies circuit design, reduces board space, and lowers component count.

 

Key electrical ratings include a collector-emitter breakdown voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a maximum power dissipation of 200 mW. The DC current gain (hFE) is a minimum of 160 at 5 mA collector current and 10 V collector-emitter voltage. The collector-emitter saturation voltage is a maximum of 250 mV at 5 mA base current and 10 mA collector current.

 

The device is housed in a surface-mount SC-75 (SOT-416) package and is supplied in tape and reel packaging with 3000 pieces per reel. It is compliant with RoHS, Pb-Free, and Halogen Free requirements, making it suitable for environmentally conscious designs.

DTC115TET1G Quick Information

Product Type: Digital Transistor (BRT)
Series: DTC115TE
Canonical Name: NPN Pre-Biased Transistor (BRT) with 100kΩ Base Resistor
Subcategory: NPN Pre-Biased

DTC115TET1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DTC115TET1G Estimated Pricing

Qty Low High
1+ $0.20 $0.20
10+ $0.18 $0.18
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC115TET1G Features

  • Integrated 100kΩ base bias resistor.
  • Rated for 50V collector-emitter voltage.
  • 100mA continuous collector current.
  • Surface mount SC-75 package.
  • RoHS and Halogen Free compliant.

DTC115TET1G Applications

  • Ideal for switching loads in portable devices.
  • Used in digital logic interface circuits.
  • Suitable for inverter and driver stages.
  • Replaces discrete transistor and two resistors.

DTC115TET1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the DTC115TET1G?

The maximum collector-emitter breakdown voltage (VCEO) is 50 V.

What package is the DTC115TET1G available in?

It is available in the SC-75 (SOT-416) surface mount package.

Is the DTC115TET1G RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free.

What is the value of the integrated base resistor?

The series base resistor (R1) is 100 kΩ.

What is the maximum collector current?

The maximum continuous collector current (IC) is 100 mA.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain is 160 at 5 mA collector current and 10 V collector-emitter voltage.

What is the mounting type for the DTC115TET1G?

It is designed for surface mount mounting.

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