DTC114YET1G Pre-biased NPN digital transistor (BRT) with integrated bias resistors (R1=10kΩ, R2=47kΩ). Rated for 50V collector-emitter voltage and 100mA continuous current.
Mfr Part #:

DTC114YET1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
Pre-biased NPN digital transistor (BRT) with integrated bias resistors (R1=10kΩ, R2=47kΩ). Rated for 50V collector-emitter voltage and 100mA continuous current.
✓ Total Stock: 3,952,767 pcs
$ Price Range: $0.04 - $0.20

DTC114YET1G Available from 4 distributors

✓ Authorised
✓ Non-Authorised

DTC114YET1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTC114YET1G Description

Short technical summary and product information.

The DTC114YET1G is a digital transistor (Bias Resistor Transistor) from onsemi, featuring a monolithic bias network with two integrated resistors: a series base resistor (R1=10kΩ) and a base-emitter resistor (R2=47kΩ). This integration eliminates the need for external bias components, simplifying circuit design and reducing board space.

 

Key electrical specifications include a maximum collector-emitter voltage of 50V, continuous collector current of 100mA, and power dissipation of 200mW. The DC current gain (hFE) is a minimum of 80 at 5mA collector current and 10V VCE, with a collector-emitter saturation voltage of 250mV max at 10mA/300µA base current. The input forward voltage is rated at 40V, and reverse voltage at 6V.

 

The device is housed in a compact SC-75 (SOT-416) surface-mount package, supplied in tape and reel packaging with 3000 units per reel. It is RoHS3 compliant, Pb-Free, and Halogen Free, making it suitable for environmentally sensitive designs.

 

This BRT is ideal for general-purpose switching, load switching, inverter circuits, and interface applications where space and component count are critical. Its integrated resistors provide consistent performance and reduce assembly costs.

DTC114YET1G Quick Information

Product Type: Pre-Biased NPN Transistor
Series: DTC114YE
Canonical Name: DTC114YET1G - Pre-Biased NPN Transistor
Subcategory: Digital Transistor (BRT)

DTC114YET1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DTC114YET1G Estimated Pricing

Qty Low High
1+ $0.20 $0.20
10+ $0.11 $0.11
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.04 $0.04
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC114YET1G Features

  • Includes integrated bias resistors R1 and R2.
  • Rated for 50V collector-emitter voltage.
  • Supports 100mA continuous collector current.
  • Maximum power dissipation of 200mW.
  • Housed in surface mount SC-75 package.

DTC114YET1G Applications

  • Simplifies circuit design by reducing component count.
  • Reduces board space requirements.
  • Ideal for space-constrained applications.
  • Used in general purpose switching.

DTC114YET1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the DTC114YET1G?

The maximum collector-emitter voltage (VCEO) is 50V.

What package is the DTC114YET1G available in?

It is available in the SC-75 (SOT-416) surface mount package.

Is the DTC114YET1G RoHS compliant?

Yes, it is RoHS3 compliant.

What is the maximum collector current of the DTC114YET1G?

The maximum continuous collector current is 100mA.

What are the integrated resistor values in the DTC114YET1G?

The base resistor (R1) is 10kΩ and the base-emitter resistor (R2) is 47kΩ.

What is the DC current gain (hFE) of the DTC114YET1G?

The minimum DC current gain is 80 at 5mA collector current and 10V VCE.

What is the power dissipation rating of the DTC114YET1G?

The maximum power dissipation is 200mW.

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