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DTC114TUAT106 NPN pre-biased transistor by ROHM Semiconductor. Rated for 50V collector-emitter breakdown, 100mA collector current, 200mW power dissipation, with 10kΩ internal base resistor.
Mfr Part #:

DTC114TUAT106

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
NPN pre-biased transistor by ROHM Semiconductor. Rated for 50V collector-emitter breakdown, 100mA collector current, 200mW power dissipation, with 10kΩ internal base resistor.
✓ Total Stock: 3,484 pcs
$ Price Range: $0.03 - $0.04

DTC114TUAT106 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,964 pcs
On Request
1964 pcs On Request 1 On Request On Request 11+ On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
1,520 pcs
On Request
1520 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DTC114TUAT106 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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DTC114TUAT106 Description

Short technical summary and product information.

The DTC114TUAT106 is an NPN pre-biased transistor from ROHM Semiconductor, featuring a built-in 10kΩ base resistor (R1) that simplifies circuit design by eliminating the need for an external resistor. It is rated for a maximum collector-emitter breakdown voltage of 50V, a maximum collector current of 100mA, and a maximum power dissipation of 200mW.

 

Electrical characteristics include a minimum DC current gain (hFE) of 100 at Ic=1mA and Vce=5V, a maximum collector-emitter saturation voltage of 300mV at Ib=1mA and Ic=10mA, and a typical transition frequency of 250MHz. These specifications make it suitable for switching and amplification in low-power applications.

 

The transistor is housed in a surface mount SC-70 (SOT-323) package with the supplier device package designation UMT3. This compact package is ideal for space-constrained designs. The pre-biased configuration reduces component count and assembly costs, making it attractive for high-volume production.

DTC114TUAT106 Quick Information

Product Type: Pre-Biased NPN Transistor
Canonical Name: ROHM Semiconductor DTC114TUAT106 NPN Pre-Biased Transistor
Subcategory: Single, Pre-Biased

DTC114TUAT106 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

DTC114TUAT106 Estimated Pricing

Qty Low High
3,000+ $0.04 $0.04
6,000+ $0.04 $0.04
9,000+ $0.04 $0.04
15,000+ $0.03 $0.03
21,000+ $0.03 $0.03
30,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC114TUAT106 Features

  • NPN pre-biased transistor with 10kΩ base resistor.
  • Rated for 50V collector-emitter voltage.
  • Maximum collector current of 100mA.
  • Power dissipation up to 200mW.
  • Surface mount UMT3 (SC-70) package.

DTC114TUAT106 Applications

  • Used in switching and amplifier circuits.
  • Ideal for low-power consumer electronics.
  • Suitable for signal processing applications.
  • Reduces component count in designs.
  • Works in battery-powered devices.

DTC114TUAT106 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

50V maximum.

What is the package type?

Surface mount SC-70 (SOT-323) with UMT3 supplier package.

Is the DTC114TUAT106 RoHS compliant?

It is listed as RoHS3 compliant, but this information is unverified.

What is the DC current gain (hFE)?

Minimum 100 at Ic=1mA, Vce=5V.

What is the saturation voltage?

Maximum 300mV at Ib=1mA, Ic=10mA.

What is the internal base resistor value?

10 kΩ.

What is the maximum power dissipation?

200 mW.

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