DTC114GUAT106 NPN pre-biased transistor from ROHM Semiconductor in UMT3 package. Features 100mA collector current, 50V Vce breakdown, and 200mW power dissipation.
Mfr Part #:

DTC114GUAT106

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
NPN pre-biased transistor from ROHM Semiconductor in UMT3 package. Features 100mA collector current, 50V Vce breakdown, and 200mW power dissipation.
✓ Total Stock: 9,338 pcs
$ Price Range: $0.03 - $0.22

DTC114GUAT106 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,338 pcs
6338 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 24+ On Request On Request

DTC114GUAT106 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTC114GUAT106 Description

Short technical summary and product information.

The DTC114GUAT106 is an NPN pre-biased transistor manufactured by ROHM Semiconductor. It integrates a 10kΩ base resistor, simplifying circuit design by reducing external component count. Key electrical specifications include a collector current rating of 100mA, collector-emitter breakdown voltage of 50V, and power dissipation of 200mW. The transistor offers a transition frequency of 250MHz and a minimum DC current gain of 30 at Ic=5mA, Vce=5V.

 

This device is surface-mount packaged in SC-70 (SOT-323) case with a UMT3 supplier package. It is designed for general-purpose switching and amplification applications where space and component count are constrained. The pre-biased configuration makes it well-suited for digital logic interfaces and low-power consumer electronics.

 

The DTC114GUAT106 is RoHS3 compliant and has an MSL rating of 1 (unlimited).

DTC114GUAT106 Quick Information

Product Type: Pre-Biased Transistor
Canonical Name: DTC114GUAT106 NPN Pre-Biased Transistor
Subcategory: Pre-Biased

DTC114GUAT106 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

DTC114GUAT106 Estimated Pricing

Qty Low High
1+ $0.22 $0.22
3,000+ $0.04 $0.04
6,000+ $0.04 $0.04
9,000+ $0.04 $0.04
15,000+ $0.03 $0.03
21,000+ $0.03 $0.03
30,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC114GUAT106 Features

  • NPN pre-biased with 10kΩ base resistor.
  • 100mA collector current rating.
  • 50V collector-emitter breakdown voltage.
  • 200mW power dissipation capability.
  • 250MHz transition frequency.

DTC114GUAT106 Applications

  • General purpose switching circuits.
  • Digital logic level interfaces.
  • Low power amplification stages.
  • Signal inversion and buffering.

DTC114GUAT106 FAQs

3 frequently asked questions generated from this part’s specifications.
What is the package type of DTC114GUAT106?

The DTC114GUAT106 is offered in SC-70 (SOT-323) case with a UMT3 supplier device package, surface mount.

What is the collector current rating of DTC114GUAT106?

The maximum collector current (Ic) is 100mA.

Is DTC114GUAT106 RoHS compliant?

The part is marked as RoHS3 Compliant, but this information is unverified.

DTC114GUAT106 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
DTC143XUAT106
DTC143XUAT106
ROHM Semiconductor
ROHM DTC143XUAT106 is an NPN pre-biased transistor with built-in base resistor (10 kΩ). It features 50 V collector-emitter voltage, 100 mA collector current, and 200 mW power dissipation in a compact UMT3 surface mount package.
View Part
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