DTC114EUAT106 DTC114EUAT106 is an NPN pre-biased transistor from ROHM Semiconductor. It features a 50V maximum collector-emitter voltage, 100mA collector current, and 200mW power dissipation.
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DTC114EUAT106

Available from 5 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
DTC114EUAT106 is an NPN pre-biased transistor from ROHM Semiconductor. It features a 50V maximum collector-emitter voltage, 100mA collector current, and 200mW power dissipation.
✓ Total Stock: 25,959 pcs
$ Price Range: $0.03 - $0.04

DTC114EUAT106 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

DTC114EUAT106 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTC114EUAT106 Description

Short technical summary and product information.

The DTC114EUAT106 is an NPN pre-biased bipolar junction transistor manufactured by ROHM Semiconductor. This device integrates a bias resistor network, simplifying circuit design by reducing external component count. It is designed for switching and amplification applications where space and component reduction are critical.

 

Key electrical specifications include a maximum collector-emitter voltage of 50V, a maximum collector current of 100mA, and a maximum power dissipation of 200mW. The transistor offers a minimum DC current gain (hFE) of 30 at 5mA and 5V, with a typical transition frequency of 250 MHz. The integrated base resistor has a nominal value of 10kΩ.

 

The DTC114EUAT106 is housed in a surface-mount SC-70 (SOT-323) package, also known as the UMT3 supplier device package. This compact package is suitable for high-density PCB designs in portable and space-constrained electronics.

DTC114EUAT106 Quick Information

Product Type: Pre-Biased Bipolar Junction Transistor
Canonical Name: DTC114EUAT106 NPN Pre-Biased Transistor
Subcategory: Single, Pre-Biased

DTC114EUAT106 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DTC114EUAT106 Estimated Pricing

Qty Low High
3,000+ $0.04 $0.04
6,000+ $0.04 $0.04
9,000+ $0.04 $0.04
15,000+ $0.03 $0.03
21,000+ $0.03 $0.03
30,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC114EUAT106 Features

  • NPN pre-biased transistor with integrated 10kΩ base resistor.
  • Maximum collector-emitter voltage rating of 50V.
  • Maximum collector current rating of 100mA.
  • Maximum power dissipation of 200mW.
  • Surface-mount SC-70 (SOT-323) package.

DTC114EUAT106 Applications

  • Used in low-power switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for space-constrained PCB designs.
  • Reduces external component count in designs.

DTC114EUAT106 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the DTC114EUAT106?

The maximum collector-emitter voltage (Vce) is 50V.

What is the maximum collector current rating?

The maximum collector current (Ic) is 100mA.

What is the power dissipation of this transistor?

The maximum power dissipation is 200mW.

What package type does the DTC114EUAT106 use?

It uses a surface-mount SC-70 (SOT-323) package, also known as UMT3.

What is the value of the integrated base resistor?

The nominal base resistor value is 10kΩ.

What is the typical transition frequency?

The typical transition frequency (ft) is 250 MHz.

What is the minimum DC current gain (hFE)?

The minimum hFE is 30 at Ic=5mA and Vce=5V.

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