| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
44,124 pcs
|
44124 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The DTC114EMT2L is a pre-biased NPN bipolar junction transistor from ROHM Semiconductor. It integrates a 10kΩ base resistor, simplifying circuit design by reducing external component count.
Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 50V, continuous collector current (Ic) of 50mA, and power dissipation of 150mW. The DC current gain (hFE) is a minimum of 30 at 5mA, 5V, and the transition frequency (ft) is 250MHz. The collector-emitter saturation voltage (Vce(sat)) is 300mV maximum at 500µA base current and 10mA collector current.
The transistor is housed in a surface-mount SOT-723 package (supplier device package VMT3), suitable for compact designs. Mounting type is surface mount.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.41 | $0.41 |
| 10+ | $0.25 | $0.25 |
| 100+ | $0.16 | $0.16 |
| 500+ | $0.12 | $0.12 |
| 1,000+ | $0.09 | $0.09 |
| 5,000+ | $0.08 | $0.08 |
| 8,000+ | $0.07 | $0.07 |
| 24,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The DTC114EMT2L comes in a SOT-723 surface mount package with a supplier device package of VMT3.
Yes, the part is listed as RoHS3 compliant.
The collector-emitter breakdown voltage (Vceo) is 50V.
The power dissipation is 150mW.
The continuous collector current (Ic) is 50mA.
The minimum DC current gain is 30 at Ic=5mA, Vce=5V.
The base resistor (R1) is 10kΩ.