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DTC114EET1G NPN pre-biased digital transistor with integrated bias resistors R1=R2=10kΩ. Rated for 50V collector-emitter breakdown and 100mA continuous collector current in a compact SC-75 surface-mount package.
Mfr Part #:

DTC114EET1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN pre-biased digital transistor with integrated bias resistors R1=R2=10kΩ. Rated for 50V collector-emitter breakdown and 100mA continuous collector current in a compact SC-75 surface-mount package.
✓ Total Stock: 906,389 pcs
$ Price Range: $0.03 - $0.17

DTC114EET1G Available from 6 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DTC114EET1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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DTC114EET1G Description

Short technical summary and product information.

The DTC114EET1G is an NPN pre-biased digital transistor (BRT) from onsemi, integrating a monolithic bias resistor network with R1=R2=10kΩ. This device eliminates external resistor components, simplifying PCB layout and reducing board space.

 

Designed for switching and amplification applications, it features a maximum collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. DC current gain (hFE) is a minimum of 35 at 5mA, 10V, and saturation voltage is 250mV maximum at 300µA base current.

 

The transistor is housed in the industry-standard SC-75 (SOT-416) surface-mount package, suitable for automated assembly. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

DTC114EET1G Quick Information

Product Type: Digital Transistor (BRT)
Canonical Name: DTC114EET1G NPN Pre-Biased Digital Transistor
Subcategory: Single, Pre-Biased Bipolar Transistor

DTC114EET1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

DTC114EET1G Estimated Pricing

Qty Low High
1+ $0.17 $0.17
10+ $0.10 $0.10
100+ $0.06 $0.06
500+ $0.05 $0.05
1,000+ $0.04 $0.04
3,000+ $0.03 $0.03
6,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC114EET1G Features

  • NPN pre-biased digital transistor BRT topology.
  • Rated for 50V collector-emitter breakdown voltage.
  • 100mA continuous collector current capability.
  • SC-75 surface-mount package for compact designs.
  • RoHS compliant and halogen free.

DTC114EET1G Applications

  • Ideal for switching and driver circuits.
  • Reduces component count in bias networks.
  • Suitable for portable and space-constrained electronics.

DTC114EET1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the package type of DTC114EET1G?

The DTC114EET1G is offered in an SC-75 (SOT-416) surface-mount package.

What is the collector-emitter breakdown voltage of DTC114EET1G?

The maximum collector-emitter breakdown voltage is 50V.

Is DTC114EET1G RoHS compliant?

Yes, the device is RoHS3 compliant as verified by the datasheet.

What bias resistors are integrated in DTC114EET1G?

The DTC114EET1G integrates a base resistor R1=10kΩ and a base-emitter resistor R2=10kΩ.

What is the maximum collector current for DTC114EET1G?

The maximum continuous collector current is 100mA.

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