DTC114EEFRATL DTC114EEFRATL is an NPN pre-biased transistor from ROHM Semiconductor. It features 150mW max power, 50V breakdown voltage, and 250MHz transition frequency in a compact EMT3 surface-mount package.
Mfr Part #:

DTC114EEFRATL

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
DTC114EEFRATL is an NPN pre-biased transistor from ROHM Semiconductor. It features 150mW max power, 50V breakdown voltage, and 250MHz transition frequency in a compact EMT3 surface-mount package.
✓ Total Stock: 2,200 pcs
$ Price Range: $0.05 - $0.36

DTC114EEFRATL Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,200 pcs
2200 pcs On Request 1 On Request On Request On Request On Request On Request

DTC114EEFRATL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTC114EEFRATL Description

Short technical summary and product information.

The DTC114EEFRATL is an NPN pre-biased bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. It integrates a 10 kΩ base resistor, simplifying circuit design by reducing external component count. This transistor is designed for switching and amplification applications in low-power circuits.

 

Key electrical specifications include a maximum collector current of 50 mA, a collector-emitter breakdown voltage (Vce) of 50 V, and a DC current gain (hFE) of 30 minimum at 5mA collector current and 5V Vce. The device offers a transition frequency (ft) of 250 MHz, making it suitable for high-speed switching. The saturation voltage is low at 300mV maximum at 10mA collector current with 500nA base current.

 

Packaged in the industry-standard SC-75 (SOT-416) surface-mount package, the DTC114EEFRATL is supplied in the EMT3 supplier device package. The component is RoHS compliant and has a moisture sensitivity level of 1 (unlimited floor life), ensuring reliable assembly in lead-free soldering processes. With a maximum power dissipation of 150 mW, it is ideal for compact, low-power designs.

DTC114EEFRATL Quick Information

Product Type: Transistor - Pre-Biased (BJT)
Canonical Name: DTC114EEFRATL - NPN Pre-Biased Transistor (BJT) with Base Resistor
Subcategory: Pre-Biased Transistor

DTC114EEFRATL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DTC114EEFRATL Estimated Pricing

Qty Low High
1+ $0.36 $0.36
10+ $0.22 $0.22
100+ $0.14 $0.14
500+ $0.10 $0.10
1,000+ $0.09 $0.09
3,000+ $0.08 $0.08
6,000+ $0.07 $0.07
9,000+ $0.06 $0.06
24,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC114EEFRATL Features

  • NPN pre-biased transistor with integrated 10kΩ base resistor.
  • Maximum power dissipation of 150mW.
  • Collector-emitter breakdown voltage of 50V.
  • Transition frequency of 250MHz for high-speed switching.
  • Surface-mount package SC-75 (SOT-416).

DTC114EEFRATL Applications

  • Ideal for low-power switching circuits.
  • Suitable for signal amplification in portable devices.
  • Used in automotive and industrial control modules.
  • Perfect for space-constrained PCB designs.
  • Excellent for high-speed switching applications.

DTC114EEFRATL FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the DTC114EEFRATL?

50 V.

What is the package type of the DTC114EEFRATL?

SC-75 (SOT-416) surface-mount package, with supplier device package EMT3.

Is the DTC114EEFRATL RoHS compliant?

Yes, it is marked as RoHS3 Compliant, but this is unverified. Please confirm from official source.

What is the maximum power dissipation?

150 mW.

What is the transition frequency?

250 MHz.

What is the DC current gain (hFE)?

Minimum 30 at Ic=5mA, Vce=5V.

What base resistor is integrated?

10 kΩ.

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