| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,178 pcs
|
11178 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The DTC114EEBTL is an NPN pre-biased transistor from ROHM Semiconductor, designed with an integrated 10kΩ base resistor to simplify circuit design by reducing external component count. It offers a maximum collector-emitter voltage of 50V and a collector current of 50mA, with a power dissipation of 150mW. The device provides a DC current gain (hFE) of minimum 30 at Ic=5mA and Vce=5V, and a saturation voltage of 300mV maximum at Ib=500µA and Ic=10mA. With a transition frequency of 250MHz, it is suitable for general-purpose switching and signal amplification applications up to moderate frequencies.
The transistor is housed in a compact surface-mount package, available as SC-89 or SOT-490, with the supplier device package designated as EMT3F (SOT-416FL). This small footprint makes it ideal for space-constrained designs in portable electronics, automotive modules, and consumer devices. The pre-biased configuration reduces board space and assembly time, making it a practical choice for high-volume production.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
| 10+ | $0.15 | $0.15 |
| 100+ | $0.09 | $0.09 |
| 500+ | $0.07 | $0.07 |
| 1,000+ | $0.06 | $0.06 |
| 3,000+ | $0.05 | $0.05 |
| 6,000+ | $0.04 | $0.04 |
| 9,000+ | $0.04 | $0.04 |
| 24,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
SC-89, SOT-490 with supplier package EMT3F (SOT-416FL).
Yes, it is listed as RoHS3 compliant, but this is unverified.
10 kΩ.
Minimum 30 at Ic=5mA, Vce=5V.
150 mW.