DTC113EM3T5G Pre-biased NPN bipolar digital transistor with integrated 1 kΩ bias resistors. Rated for 50 V collector-emitter voltage and 100 mA collector current, in SOT-723 package.
Mfr Part #:

DTC113EM3T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Pre-biased NPN bipolar digital transistor with integrated 1 kΩ bias resistors. Rated for 50 V collector-emitter voltage and 100 mA collector current, in SOT-723 package.
✓ Total Stock: 120,000 pcs
$ Price Range: $0.04 - $0.26

DTC113EM3T5G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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120,000 pcs
120000 pcs On Request 1 On Request On Request On Request On Request On Request

DTC113EM3T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTC113EM3T5G Description

Short technical summary and product information.

The DTC113EM3T5G is a pre-biased NPN bipolar junction transistor (BJT) from onsemi, part of the DTC113E digital transistor series. It integrates a series base resistor (R1) and a base-emitter resistor (R2), each 1 kΩ, into a single SOT-723 package, eliminating the need for external bias components.

 

With a collector-emitter voltage rating of 50 V and collector-base voltage rating of 50 V, the device supports a continuous collector current of 100 mA. It dissipates up to 260 mW, and offers a DC current gain (hFE) of 3 minimum at IC=5 mA and VCE=10 V, with a collector-emitter saturation voltage of 250 mV maximum at IB=5 mA and IC=10 mA.

 

The integrated bias network simplifies circuit design and reduces board space, making the device suitable for switching and amplifier circuits where a stable, pre-configured input bias is desired. It can be used in a variety of low-current applications such as logic interfaces, driver stages, and general-purpose switching.

 

The SOT-723 package is a compact surface-mount package suited for space-constrained designs. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, meeting common environmental requirements.

DTC113EM3T5G Quick Information

Product Type: Pre-Biased NPN Bipolar Transistor (BJT)
Series: DTC113E
Canonical Name: Pre-Biased NPN Bipolar Transistor with 1 kΩ Bias Resistors
Subcategory: NPN Digital Transistor with Bias Resistors

DTC113EM3T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DTC113EM3T5G Estimated Pricing

Qty Low High
1+ $0.26 $0.26
10+ $0.16 $0.16
100+ $0.10 $0.10
500+ $0.07 $0.07
1,000+ $0.06 $0.06
5,000+ $0.04 $0.04
8,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTC113EM3T5G Features

  • Integrated 1 kΩ bias resistor network.
  • Rated for 50 V collector-emitter voltage.
  • Supports 100 mA continuous collector current.
  • Compact SOT-723 surface-mount package.
  • RoHS compliant and halogen-free construction.

DTC113EM3T5G Applications

  • Replaces a single transistor and external bias resistors.
  • Suitable for low-current switching and driver circuits.
  • Used in logic level interface applications.

DTC113EM3T5G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the DTC113EM3T5G?

The maximum collector-emitter voltage (VCEO) is 50 V.

What is the maximum collector-base voltage rating?

The maximum collector-base voltage (VCBO) is 50 V.

What is the maximum collector current rating?

The maximum continuous collector current is 100 mA.

What are the integrated bias resistor values?

Both R1 and R2 are 1 kΩ.

What is the minimum DC current gain (hFE)?

The minimum hFE is 3 at IC=5 mA and VCE=10 V.

What is the collector-emitter saturation voltage?

The maximum VCE(sat) is 250 mV at IB=5 mA and IC=10 mA.

What is the maximum power dissipation?

The maximum power dissipation is 260 mW.

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