| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,626 pcs
|
5626 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The DTC014EMT2L is an NPN pre-biased bipolar junction transistor manufactured by ROHM Semiconductor. It integrates a 10kΩ base resistor (R1) into the device, simplifying circuit design by reducing external component count. The transistor is rated for a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 50mA, with a maximum power dissipation of 150mW.
The device offers a minimum DC current gain (hFE) of 35 at Ic=5mA and Vce=10V, and a maximum collector-emitter saturation voltage of 150mV at Ib=500µA and Ic=5mA. The transition frequency is 250MHz, making it suitable for switching and signal amplification applications in low-power circuits.
The DTC014EMT2L is housed in a surface-mount SOT-723 package with a supplier device package designation of VMT3. This compact package is well-suited for space-constrained PCB designs. The pre-biased configuration simplifies circuit layout by eliminating the need for an external base resistor, making it useful in switching circuits, interface circuits, and driver stages where component count reduction is beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.22 | $0.22 |
| 10+ | $0.14 | $0.14 |
| 100+ | $0.08 | $0.08 |
| 500+ | $0.06 | $0.06 |
| 1,000+ | $0.05 | $0.05 |
| 2,000+ | $0.05 | $0.05 |
| 8,000+ | $0.04 | $0.04 |
| 16,000+ | $0.03 | $0.03 |
| 24,000+ | $0.03 | $0.03 |
| 40,000+ | $0.03 | $0.03 |
| 56,000+ | $0.03 | $0.03 |
| 80,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 50V.
The maximum collector current is 50mA.
The maximum power dissipation is 150mW.
The base resistor (R1) is 10kΩ.
The DTC014EMT2L is available in a SOT-723 surface-mount package, with a supplier device package of VMT3.
The transition frequency is 250MHz.
The minimum DC current gain (hFE) is 35, measured at Ic = 5mA and Vce = 10V.