DTB123YKT146 The DTB123YKT146 is a PNP pre-biased transistor from ROHM Semiconductor. It features a 50V collector-emitter breakdown voltage, 500mA collector current, and 200mW power dissipation in a surface-mount SMT3 package.
Mfr Part #:

DTB123YKT146

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The DTB123YKT146 is a PNP pre-biased transistor from ROHM Semiconductor. It features a 50V collector-emitter breakdown voltage, 500mA collector current, and 200mW power dissipation in a surface-mount SMT3 package.
✓ Total Stock: 1,582 pcs
$ Price Range: $0.10 - $0.62

DTB123YKT146 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,555 pcs
1555 pcs On Request 1 On Request On Request On Request On Request 2026-04-21 02:16:36
Non-Authorised Inventory information
27 pcs
27 pcs On Request 1 On Request On Request On Request On Request On Request

DTB123YKT146 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTB123YKT146 Description

Short technical summary and product information.

The DTB123YKT146 is a PNP pre-biased transistor manufactured by ROHM Semiconductor. It integrates a bias resistor (10 kΩ base resistor) to simplify circuit design by reducing external component count. This device is designed for general-purpose switching and amplification applications.

 

Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 50 V, a collector current (Ic) rating of 500 mA, and a power dissipation of 200 mW. The DC current gain (hFE) is a minimum of 56 at Ic=50mA, Vce=5V, and the collector-emitter saturation voltage (Vce(sat)) is a maximum of 300 mV at Ib=2.5mA, Ic=50mA. The transition frequency (ft) is 200 MHz, making it suitable for moderate-speed switching.

 

The transistor is housed in a surface-mount SMT3 package, which is compatible with TO-236-3, SC-59, and SOT-23-3 footprints. This compact package is ideal for space-constrained designs. The device is RoHS3 compliant and has an MSL of 1 (unlimited), indicating no moisture sensitivity restrictions.

DTB123YKT146 Quick Information

Product Type: Pre-Biased Bipolar Transistor
Canonical Name: DTB123YKT146 - PNP Pre-Biased Transistor
Subcategory: Single Pre-Biased Bipolar Transistor

DTB123YKT146 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DTB123YKT146 Estimated Pricing

Qty Low High
1+ $0.62 $0.62
10+ $0.38 $0.38
100+ $0.24 $0.24
500+ $0.18 $0.18
1,000+ $0.16 $0.16
3,000+ $0.16 $0.16
6,000+ $0.13 $0.13
9,000+ $0.11 $0.11
24,000+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTB123YKT146 Features

  • PNP pre-biased transistor with integrated 10 kΩ base resistor.
  • Rated for 50V collector-emitter breakdown voltage.
  • Supports up to 500mA collector current.
  • 200mW power dissipation in SMT3 package.
  • 200 MHz transition frequency for switching applications.

DTB123YKT146 Applications

  • Ideal for general-purpose switching circuits.
  • Used in signal amplification stages.
  • Suitable for low-power driver applications.
  • Common in portable electronic devices.

DTB123YKT146 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the DTB123YKT146?

The DTB123YKT146 is available in a surface-mount SMT3 package, compatible with TO-236-3, SC-59, and SOT-23-3 footprints.

Is the DTB123YKT146 RoHS compliant?

Yes, the DTB123YKT146 is RoHS3 compliant.

What is the collector-emitter breakdown voltage of the DTB123YKT146?

The collector-emitter breakdown voltage (Vceo) is 50 V.

What is the maximum collector current?

The maximum collector current (Ic) is 500 mA.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 56 at Ic=50mA, Vce=5V.

What is the transition frequency?

The transition frequency (ft) is 200 MHz.

What is the power dissipation rating?

The power dissipation (Pd) is 200 mW.

DTB123YKT146 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
DTB113ZKT146
DTB113ZKT146
ROHM Semiconductor
The DTB113ZKT146 is a PNP pre-biased transistor from ROHM Semiconductor. It features a 50V collector-emitter voltage, 500mA collector current, and 200mW power dissipation in a SMT3 package.
View Part
Home
Account

Categories