| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72,000 pcs
|
72000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The DTA144WET1G is a PNP pre-biased digital transistor (Bias Resistor Transistor, BRT) from ON Semiconductor that integrates a monolithic bias resistor network, eliminating external components and reducing board space. It features a built-in series base resistor (R1) of 47kΩ and a base-emitter resistor (R2) of 22kΩ.
Electrical specifications include a maximum collector-base voltage (VCBO) of 50V, maximum collector-emitter voltage (VCEO) of 50V, and continuous collector current (IC) of 100mA. The DC current gain (hFE) is minimum 80 at Ic=5mA, Vce=10V, and maximum Vce saturation is 250mV at Ib=300µA, Ic=10mA. Power dissipation is limited to 200mW.
The device is housed in a compact SC-75 (SOT-416) surface mount package, suitable for low-power switching and amplifier applications. It is Pb-free, Halogen Free/BFR Free, and RoHS compliant as verified by the manufacturer datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.20 | $0.20 |
| 10+ | $0.11 | $0.11 |
| 100+ | $0.07 | $0.07 |
| 500+ | $0.05 | $0.05 |
| 1,000+ | $0.04 | $0.04 |
| 3,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50V and collector-base voltage (VCBO) is also 50V.
It is available in an SC-75 (SOT-416) surface mount package.
Yes, it is RoHS3 compliant and also Pb-Free and Halogen Free/BFR Free as per the datasheet.
The series base resistor (R1) is 47kΩ and the base-emitter resistor (R2) is 22kΩ.
The minimum DC current gain (hFE) is 80 at Ic=5mA, Vce=10V.
The maximum power dissipation is 200mW.