| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,000 pcs
|
27000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The DTA124EET1G is a PNP pre-biased digital transistor (Bias Resistor Transistor) from On Semiconductor. It integrates a monolithic bias network consisting of two 22kΩ resistors (R1 and R2), eliminating the need for external resistor components. This simplifies circuit design, reduces board space, and lowers component count. The device is rated for a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. It offers a minimum DC current gain (hFE) of 60 at Ic=5mA, Vce=10V, and a maximum saturation voltage of 250mV at Ib=300µA, Ic=10mA. The transistor is housed in a surface-mount SC-75 (SOT-416) package, suitable for compact designs. It is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free. Typical applications include switching and amplification in low-power circuits where space is constrained.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.17 | $0.17 |
| 10+ | $0.10 | $0.10 |
| 100+ | $0.06 | $0.06 |
| 500+ | $0.05 | $0.05 |
| 1,000+ | $0.04 | $0.04 |
| 3,000+ | $0.03 | $0.03 |
| 6,000+ | $0.03 | $0.03 |
| 24,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
It is available in a surface-mount SC-75 (SOT-416) package.
Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.
The minimum DC current gain (hFE) is 60 at Ic=5mA, Vce=10V.
The base resistor (R1) and base-emitter resistor (R2) are both 22 kΩ.
The maximum power dissipation is 200 mW at TA=25°C.
Surface mount.