| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,640 pcs
|
2640 pcs | On Request | 1 | On Request | On Request | 1119+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The DTA123YKAT146 is a PNP pre-biased bipolar transistor from ROHM Semiconductor. It integrates a 10 kΩ base resistor, enabling direct drive from microcontrollers or logic gates without additional external bias components. The device is rated for a maximum collector-emitter voltage of 50 V and a maximum collector current of 100 mA, with a power dissipation of 200 mW.
Electrical characteristics include a minimum DC current gain (hFE) of 33 at IC=10 mA and VCE=5 V, a maximum saturation voltage of 300 mV at IB=500 µA and IC=10 mA, and a minimum transition frequency of 250 MHz. The built-in resistor reduces external component count and simplifies switching and interface circuit design.
This device is supplied in a surface-mount SOT-23-3 (TO-236-3 / SC-59) package, with the supplier device package designation SMT3. The compact package is suitable for space-constrained PCB layouts and supports standard reflow soldering. The part is listed as RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
| 10+ | $0.15 | $0.15 |
| 100+ | $0.09 | $0.09 |
| 500+ | $0.07 | $0.07 |
| 1,000+ | $0.06 | $0.06 |
| 3,000+ | $0.06 | $0.06 |
| 6,000+ | $0.04 | $0.04 |
| 9,000+ | $0.04 | $0.04 |
| 24,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V.
TO-236-3 / SC-59 / SOT-23-3 surface-mount package, supplier device package SMT3.
It is listed as RoHS3 compliant.
10 kΩ.
100 mA and 200 mW.
33 at IC=10 mA, VCE=5 V.
250 MHz minimum.