| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,220 pcs
|
14220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DTA123JMT2L is a PNP pre-biased bipolar transistor manufactured by ROHM Semiconductor. It integrates a bias resistor (47 kΩ) in a compact surface mount package, simplifying circuit design by reducing external component count.
This transistor offers a collector current rating of 100 mA and a collector-emitter breakdown voltage of 50 V. The DC current gain (hFE) is a minimum of 80 at 10 mA collector current and 5 V Vce. The saturation voltage is 300 mV maximum at 250 µA base current and 5 mA collector current. The transition frequency is 250 MHz, suitable for moderate-speed switching applications.
The device is housed in a SOT-723 package (supplier device package VMT3) and is designed for surface mount assembly. Power dissipation is rated at 150 mW. The component is RoHS3 compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
| 10+ | $0.29 | $0.29 |
| 100+ | $0.19 | $0.19 |
| 500+ | $0.12 | $0.12 |
| 1,000+ | $0.10 | $0.10 |
| 2,500+ | $0.09 | $0.09 |
| 5,000+ | $0.08 | $0.08 |
| 8,000+ | $0.05 | $0.05 |
| 24,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is 50V.
The transistor is available in a SOT-723 surface mount package, also known as VMT3.
Yes, the DTA123JMT2L is RoHS3 compliant.
Minimum hFE of 80 at Ic=10mA, Vce=5V.
Maximum collector current (Ic) is 100 mA.
Power dissipation is 150 mW.
Transition frequency (fT) is 250 MHz.