DTA123JMT2L DTA123JMT2L is a PNP pre-biased bipolar transistor from ROHM Semiconductor. It features 150mW power dissipation, 100mA collector current, and 50V collector-emitter breakdown voltage in a surface mount VMT3 package.
Mfr Part #:

DTA123JMT2L

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
DTA123JMT2L is a PNP pre-biased bipolar transistor from ROHM Semiconductor. It features 150mW power dissipation, 100mA collector current, and 50V collector-emitter breakdown voltage in a surface mount VMT3 package.
✓ Total Stock: 14,220 pcs
$ Price Range: $0.05 - $0.42

DTA123JMT2L Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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14,220 pcs
14220 pcs On Request 1 On Request On Request On Request On Request On Request

DTA123JMT2L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTA123JMT2L Description

Short technical summary and product information.

The DTA123JMT2L is a PNP pre-biased bipolar transistor manufactured by ROHM Semiconductor. It integrates a bias resistor (47 kΩ) in a compact surface mount package, simplifying circuit design by reducing external component count.

 

This transistor offers a collector current rating of 100 mA and a collector-emitter breakdown voltage of 50 V. The DC current gain (hFE) is a minimum of 80 at 10 mA collector current and 5 V Vce. The saturation voltage is 300 mV maximum at 250 µA base current and 5 mA collector current. The transition frequency is 250 MHz, suitable for moderate-speed switching applications.

 

The device is housed in a SOT-723 package (supplier device package VMT3) and is designed for surface mount assembly. Power dissipation is rated at 150 mW. The component is RoHS3 compliant and has an MSL of 1 (unlimited).

DTA123JMT2L Quick Information

Product Type: Pre-Biased Bipolar Transistor
Canonical Name: DTA123JMT2L - PNP Pre-Biased Transistor, 150mW, VMT3
Subcategory: Pre-Biased

DTA123JMT2L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DTA123JMT2L Estimated Pricing

Qty Low High
1+ $0.42 $0.42
10+ $0.29 $0.29
100+ $0.19 $0.19
500+ $0.12 $0.12
1,000+ $0.10 $0.10
2,500+ $0.09 $0.09
5,000+ $0.08 $0.08
8,000+ $0.05 $0.05
24,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTA123JMT2L Features

  • PNP pre-biased transistor with 47kΩ resistor.
  • 150mW power dissipation rating.
  • 100mA collector current capability.
  • 50V collector-emitter breakdown voltage.
  • Surface mount VMT3 package.

DTA123JMT2L Applications

  • Used in low-power switching circuits.
  • Suitable for signal amplification applications.
  • Ideal for portable electronic devices.
  • Common in voltage regulation circuits.
  • Used in interface and driver circuits.

DTA123JMT2L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

The collector-emitter breakdown voltage (VCEO) is 50V.

What package is the DTA123JMT2L available in?

The transistor is available in a SOT-723 surface mount package, also known as VMT3.

Is the DTA123JMT2L RoHS compliant?

Yes, the DTA123JMT2L is RoHS3 compliant.

What is the DC current gain (hFE) of this transistor?

Minimum hFE of 80 at Ic=10mA, Vce=5V.

What is the maximum collector current?

Maximum collector current (Ic) is 100 mA.

What is the power dissipation rating?

Power dissipation is 150 mW.

What is the transition frequency?

Transition frequency (fT) is 250 MHz.

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