| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,602 pcs
|
2602 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The DTA123JETL is a PNP pre-biased bipolar junction transistor manufactured by ROHM Semiconductor. It features a built-in base resistor of 47 kΩ, simplifying circuit design by reducing external component count. Key electrical characteristics include a collector-emitter voltage rating of 50 V, a continuous collector current of 100 mA, and a power dissipation of 150 mW. The transistor offers a DC current gain (hFE) of minimum 80 at 10 mA collector current and 5 V collector-emitter voltage, with a transition frequency of 250 MHz. The saturation voltage is typically 300 mV at 5 mA collector current and 250 µA base current. The device is housed in a compact SC-75/SOT-416 surface mount package, also known as EMT3, making it suitable for space-constrained applications. It is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited). This pre-biased transistor is ideal for switching and amplification in low-power circuits where component count reduction is desired.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.34 | $0.34 |
| 10+ | $0.21 | $0.21 |
| 100+ | $0.13 | $0.13 |
| 500+ | $0.10 | $0.10 |
| 3,000+ | $0.07 | $0.07 |
| 6,000+ | $0.06 | $0.06 |
| 9,000+ | $0.05 | $0.05 |
| 24,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V.
100 mA.
47 kΩ.
SC-75, SOT-416 (EMT3 supplier package).
Yes, RoHS3 compliant (unverified).
Minimum 80 at Ic=10mA, Vce=5V.
150 mW.