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DTA123JET1G The DTA123JET1G is a PNP pre-biased digital transistor (BRT) from On Semiconductor. It features 50V collector-emitter voltage, 100mA continuous current, and integrated bias resistors R1=2.2kΩ, R2=47kΩ in a compact SC-75 surface mount package.
Mfr Part #:

DTA123JET1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The DTA123JET1G is a PNP pre-biased digital transistor (BRT) from On Semiconductor. It features 50V collector-emitter voltage, 100mA continuous current, and integrated bias resistors R1=2.2kΩ, R2=47kΩ in a compact SC-75 surface mount package.
✓ Total Stock: 108,000 pcs
$ Price Range: $0.03 - $0.19

DTA123JET1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
108,000 pcs
On Request
108000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DTA123JET1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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DTA123JET1G Description

Short technical summary and product information.

The DTA123JET1G is a PNP pre-biased digital transistor (Bias Resistor Transistor) from On Semiconductor. It integrates a PNP transistor with a monolithic bias network consisting of two resistors: a series base resistor R1 of 2.2 kΩ and a base-emitter resistor R2 of 47 kΩ. This integration eliminates the need for external bias components, reducing board space and system cost.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, maximum collector-base voltage (VCBO) of 50 V, and continuous collector current (IC) of 100 mA. The device offers a minimum DC current gain (hFE) of 80 at 5 mA collector current and 10 V collector-emitter voltage. Maximum power dissipation is 200 mW. The input forward voltage is rated up to 12 Vdc, and input reverse voltage up to 5 Vdc.

 

The DTA123JET1G is housed in a compact SC-75 (SOT-416) surface mount package, suitable for space-constrained applications. It is supplied in tape and reel packaging with a standard quantity of 3000 pieces. The device is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free, meeting current environmental standards.

DTA123JET1G Quick Information

Product Type: Digital Transistor (BRT)
Series: DTA123JE
Canonical Name: PNP Pre-Biased Digital Transistor (BRT) 50V 100mA SC-75
Subcategory: Single Pre-Biased PNP

DTA123JET1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DTA123JET1G Estimated Pricing

Qty Low High
1+ $0.19 $0.19
10+ $0.11 $0.11
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.05 $0.05
3,000+ $0.04 $0.04
6,000+ $0.03 $0.03
24,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTA123JET1G Features

  • Integrated bias resistors R1=2.2kΩ and R2=47kΩ.
  • Rated for 50V collector-emitter voltage.
  • 100mA continuous collector current.
  • Compact SC-75 surface mount package.
  • RoHS and Halogen Free compliant.

DTA123JET1G Applications

  • Ideal for low-power switching circuits.
  • Used in portable electronic devices.
  • Suitable for signal amplification stages.
  • Reduces board space in dense designs.

DTA123JET1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the DTA123JET1G?

The maximum collector-emitter voltage (VCEO) is 50 V.

What package type is the DTA123JET1G available in?

It is available in an SC-75 (SOT-416) surface mount package.

Is the DTA123JET1G RoHS compliant?

Yes, it is RoHS3 compliant as verified in the datasheet.

What are the integrated bias resistor values?

The base resistor R1 is 2.2 kΩ and the base-emitter resistor R2 is 47 kΩ.

What is the minimum DC current gain (hFE) of the DTA123JET1G?

The minimum hFE is 80 at Ic=5mA and Vce=10V.

What is the maximum power dissipation of this transistor?

The maximum power dissipation is 200 mW.

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