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DTA114YKAT146 PNP pre-biased transistor with built-in base resistor (47kΩ). Rated for 50V collector-emitter voltage, 100mA collector current, and 200mW power dissipation.
Mfr Part #:

DTA114YKAT146

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
PNP pre-biased transistor with built-in base resistor (47kΩ). Rated for 50V collector-emitter voltage, 100mA collector current, and 200mW power dissipation.
Total Stock: 2,180 pcs
$ Price Range: $0.03 - $0.24

DTA114YKAT146 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,180 pcs
2180 pcs On Request 1 On Request On Request 04+ On Request On Request

DTA114YKAT146 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTA114YKAT146 Description

Short technical summary and product information.

The DTA114YKAT146 is a PNP pre-biased transistor from ROHM Semiconductor, designed for switching and amplification applications where a built-in bias resistor simplifies circuit design. It features a 47kΩ base resistor (R1) integrated into the device, reducing component count. The transistor is rated for a collector-emitter voltage of 50V, continuous collector current of 100mA, and power dissipation of 200mW. With a DC current gain (hFE) of minimum 68 at 5mA and 5V, and a transition frequency of 250MHz, it is suitable for low-frequency switching and general-purpose amplification.

 

The device is offered in a compact surface-mount package compatible with TO-236, SC-59, and SOT-23 footprints, with a supplier device package designation of SMT3. It is RoHS3 compliant (unverified), MSL level 1 unlimited, and unaffected by REACH. The package is suitable for automated assembly in high-volume production.

 

Typical applications include signal switching, driver circuits, and interface circuits where the pre-biased configuration minimizes external components. The device's maximum collector-emitter saturation voltage of 300mV at low base current ensures efficient switching.

DTA114YKAT146 Quick Information

Product Type: Pre-Biased Transistor
Canonical Name: PNP Pre-Biased Transistor, 50V, 100mA, 200mW, SMT3
Subcategory: Single, Pre-Biased

DTA114YKAT146 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DTA114YKAT146 Estimated Pricing

Qty Low High
1+ $0.24 $0.24
10+ $0.15 $0.15
100+ $0.09 $0.09
500+ $0.07 $0.07
1,000+ $0.06 $0.06
3,000+ $0.05 $0.05
6,000+ $0.04 $0.04
9,000+ $0.04 $0.04
24,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTA114YKAT146 Features

  • PNP pre-biased transistor with 47kΩ base resistor.
  • Rated for 50V collector-emitter voltage.
  • Maximum collector current of 100mA.
  • Power dissipation of 200mW.
  • Surface mount SMT3 package.

DTA114YKAT146 Applications

  • Ideal for signal switching circuits.
  • Used in driver and interface circuits.
  • Suitable for low-power amplification.
  • Reduces component count in designs.

DTA114YKAT146 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the DTA114YKAT146?

The collector-emitter voltage (Vce) is rated at 50V.

What is the collector current rating?

The continuous collector current is 100mA.

What is the power dissipation rating?

The maximum power dissipation is 200mW.

What is the built-in base resistor value?

The base resistor (R1) is 47kΩ.

What package does the DTA114YKAT146 come in?

It is available in surface mount packages: TO-236-3, SC-59, SOT-23-3, with supplier device package SMT3.

Is the DTA114YKAT146 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified (low confidence).

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain is 68 at 5mA collector current and 5V collector-emitter voltage.

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