Mfr Part #:

DTA114YET1

PNP pre-biased transistor with integrated bias resistors. Rated for 50V collector-emitter voltage and 100mA collector current in a SC-75/SOT-416 surface mount package.

✓ Total Stock: 990 pcs

$ Price Range: $0.02

DTA114YET1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	990 pcs On Request	990 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

DTA114YET1 Description

Short technical summary and product information.

The DTA114YET1 is a PNP Bias Resistor Transistor (BRT) from On Semiconductor, designed to replace a single transistor and its external resistor bias network. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor, reducing component count and board space.

This device features a maximum collector-base voltage of 50V, collector-emitter voltage of 50V, and collector current of 100mA. It offers a minimum DC current gain (hFE) of 80 at Ic=5mA and Vce=10V, with a low Vce saturation voltage of 250mV at Ib=300µA and Ic=10mA. Power dissipation is rated at 200mW on an FR-4 board at 25°C ambient.

The DTA114YET1 is housed in the SC-75/SOT-416 surface mount package, suitable for low-power applications. The package features modified gull-wing leads that absorb thermal stress during soldering, supporting wave or reflow soldering processes.

DTA114YET1 Quick Information

Product Type: Pre-Biased Bipolar Transistor

Series: DTA114EET1 Series

Canonical Name: DTA114YET1 PNP Pre-Biased Transistor

Subcategory: Pre-Biased Bipolar Junction Transistor

DTA114YET1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-Free Packages are Available

DTA114YET1 Estimated Pricing

Qty	Low	High
24,000+	$0.02	$0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTA114YET1 Features

PNP pre-biased transistor with integrated resistors.
Rated for 50V collector-emitter voltage.
100mA maximum collector current capability.
200mW power dissipation on FR-4 board.
SC-75/SOT-416 surface mount package.

DTA114YET1 Applications

Used in low-power switching circuits.
Ideal for digital transistor applications.
Suitable for space-constrained PCB designs.
Replaces discrete transistor plus resistor network.

DTA114YET1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage of the DTA114YET1?

The maximum collector-emitter voltage (VCEO) is 50V.

What is the maximum collector current rating?

The maximum collector current (IC) is 100mA.

What package is the DTA114YET1 available in?

The DTA114YET1 is available in the SC-75/SOT-416 surface mount package.

What is the power dissipation of this transistor?

The maximum power dissipation is 200mW on an FR-4 board at 25°C ambient.

What is the minimum DC current gain (hFE) of the DTA114YET1?

The minimum DC current gain (hFE) is 80 at Ic=5mA and Vce=10V.

What is the Vce saturation voltage?

The maximum Vce saturation voltage is 250mV at Ib=300µA and Ic=10mA.

What is the thermal resistance of this device?

The maximum thermal resistance junction-to-ambient is 600°C/W on an FR-4 board.

DTA114YET1 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.

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DTA143ZET1G

On Semiconductor

PNP pre-biased transistor (BRT) with 50V VCEO and 100mA IC. Features integrated bias resistors R1=4.7kΩ and R2=47kΩ in a compact SC-75 surface-mount package.

View Part

DTA144EET1G