DTA114EUAT106 DTA114EUAT106 is a PNP pre-biased transistor from ROHM Semiconductor. It features 50V collector-emitter voltage, 200mW power dissipation, and is housed in a surface-mount UMT3 package.
Mfr Part #:

DTA114EUAT106

Available from 3 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
DTA114EUAT106 is a PNP pre-biased transistor from ROHM Semiconductor. It features 50V collector-emitter voltage, 200mW power dissipation, and is housed in a surface-mount UMT3 package.
✓ Total Stock: 5,510 pcs
$ Price Range: $0.03 - $0.22

DTA114EUAT106 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,292 pcs
2292 pcs On Request 1 On Request On Request 05+ On Request On Request
Non-Authorised Inventory information
218 pcs
218 pcs On Request 1 On Request On Request On Request On Request On Request

DTA114EUAT106 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTA114EUAT106 Description

Short technical summary and product information.

The DTA114EUAT106 is a PNP pre-biased transistor from ROHM Semiconductor, featuring an integrated 10kΩ base resistor that simplifies circuit design by reducing external component count. Key electrical specifications include a collector-emitter voltage (VCEO) of 50V, a collector current rating of 50mA, and a power dissipation of 200mW. The transistor offers a minimum DC current gain (hFE) of 30 at 5mA, 5V, and a transition frequency of 250MHz, making it suitable for low-frequency switching and signal amplification applications. The device is packaged in a surface-mount SC-70 (SOT-323) case with a supplier device package designation of UMT3, ideal for high-density PCB designs. Maximum Vce saturation is 300mV at 10mA collector current and 500µA base current.

DTA114EUAT106 Quick Information

Product Type: PNP Pre-Biased Transistor
Canonical Name: DTA114EUAT106 PNP Pre-Biased Transistor
Subcategory: Single Bipolar Junction Transistor (BJT)

DTA114EUAT106 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

DTA114EUAT106 Estimated Pricing

Qty Low High
1+ $0.22 $0.22
3,000+ $0.04 $0.04
6,000+ $0.04 $0.04
9,000+ $0.04 $0.04
15,000+ $0.03 $0.03
21,000+ $0.03 $0.03
30,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTA114EUAT106 Features

  • PNP pre-biased transistor with 10kΩ base resistor.
  • Rated for 50V collector-emitter voltage.
  • 200mW power dissipation capability.
  • Surface mount UMT3 (SC-70/SOT-323) package.
  • Transition frequency of 250 MHz.

DTA114EUAT106 Applications

  • Used in switching and amplifier circuits.
  • Ideal for low-power portable devices.
  • Suitable for signal conditioning applications.
  • Common in interface circuits and gate drivers.

DTA114EUAT106 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of DTA114EUAT106?

The collector-emitter voltage (VCEO) is 50V.

What is the package type of DTA114EUAT106?

It is available in SC-70, SOT-323, and supplier device package UMT3 (surface mount).

Is the DTA114EUAT106 RoHS compliant?

It is listed as RoHS3 Compliant, but this is unverified. Verify with manufacturer.

What is the power dissipation of DTA114EUAT106?

200 mW.

What is the maximum collector current?

50 mA.

What is the base resistor value inside the transistor?

10 kΩ.

What is the transition frequency?

250 MHz.

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