DTA114EETL PNP pre-biased transistor with 50V collector-emitter breakdown, 100mA collector current, and 150mW power dissipation in SC-75 package.
Mfr Part #:

DTA114EETL

Available from 3 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
PNP pre-biased transistor with 50V collector-emitter breakdown, 100mA collector current, and 150mW power dissipation in SC-75 package.
✓ Total Stock: 15,806 pcs
$ Price Range: $0.04 - $0.30

DTA114EETL Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
12,000 pcs
12000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
1,903 pcs
1903 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,903 pcs
1903 pcs On Request 1 On Request On Request On Request On Request On Request

DTA114EETL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
SVHC Present
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DTA114EETL Description

Short technical summary and product information.

The DTA114EETL is a PNP pre-biased transistor from ROHM Semiconductor. It integrates a 10 kΩ base resistor (R1), simplifying circuit design by reducing external component count. This device is rated for a maximum collector-emitter breakdown voltage of 50 V and a continuous collector current of 100 mA, with a maximum power dissipation of 150 mW.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 5 mA and 5 V, a maximum saturation voltage of 300 mV at 500 µA base current and 10 mA collector current, and a transition frequency of 250 MHz. These specifications make it suitable for low-power switching and amplification applications.

 

The transistor is housed in a compact SC-75 (SOT-416) surface-mount package with an EMT3 supplier device package. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). The surface-mount form factor enables efficient use of board space in space-constrained designs.

DTA114EETL Quick Information

Product Type: PNP Pre-Biased Transistor
Canonical Name: PNP Pre-Biased Transistor
Subcategory: Single, Pre-Biased

DTA114EETL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DTA114EETL Estimated Pricing

Qty Low High
1+ $0.30 $0.30
10+ $0.18 $0.18
100+ $0.11 $0.11
500+ $0.08 $0.08
1,000+ $0.07 $0.07
3,000+ $0.06 $0.06
6,000+ $0.06 $0.06
9,000+ $0.05 $0.05
24,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTA114EETL Features

  • PNP pre-biased with integrated 10kΩ base resistor.
  • Rated for 50V collector-emitter breakdown.
  • Supports 100mA collector current.
  • 150mW maximum power dissipation.
  • Surface mount SC-75 package.

DTA114EETL Applications

  • Used in low-power switching circuits.
  • Ideal for digital logic interface.
  • Suitable for amplifier bias networks.
  • Simplifies board layout with built-in resistor.

DTA114EETL FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (Vceo) is 50V.

What is the maximum collector current?

The maximum continuous collector current (Ic) is 100mA.

What package is this transistor available in?

It is available in an SC-75 (SOT-416) surface-mount package with an EMT3 supplier device package.

What is the DC current gain (hFE)?

The minimum DC current gain (hFE) is 30 at 5mA collector current and 5V collector-emitter voltage.

Is this component RoHS compliant?

The part is listed as RoHS3 compliant, though this information is unverified.

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