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DTA113EET1G PNP Pre-Biased Transistor (BRT) with integrated base resistors R1=1kΩ and R2=1kΩ. Rated for 50V collector-emitter breakdown and 100mA continuous collector current.
Mfr Part #:

DTA113EET1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP Pre-Biased Transistor (BRT) with integrated base resistors R1=1kΩ and R2=1kΩ. Rated for 50V collector-emitter breakdown and 100mA continuous collector current.
✓ Total Stock: 282,000 pcs
$ Price Range: $0.03 - $0.19

DTA113EET1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
282,000 pcs
On Request
282000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DTA113EET1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Industrial Grade
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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DTA113EET1G Description

Short technical summary and product information.

This is a PNP digital transistor (Bias Resistor Transistor) from On Semiconductor, integrating two bias resistors (R1=1kΩ, R2=1kΩ) in a single SC-75 surface mount package. It simplifies circuit design by eliminating external resistor components.

 

Electrical specifications: maximum collector-emitter voltage 50V, continuous collector current 100mA, power dissipation 200mW. DC current gain (hFE) minimum 3 at 5mA, 10V. Collector-emitter saturation voltage maximum 250mV at 5mA base current and 10mA collector current.

 

The device is housed in the SC-75 (SOT-416) package, suitable for surface mount assembly. Supplied in tape and reel packaging with 3000 units per reel. It is Pb-free, Halogen Free/BFR Free, and RoHS compliant.

DTA113EET1G Quick Information

Product Type: Pre-Biased PNP Transistor
Series: DTA113E
Canonical Name: PNP Pre-Biased Transistor (BRT) with 1kΩ Base Resistors, SC-75 Package
Subcategory: Single, Pre-Biased

DTA113EET1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DTA113EET1G Estimated Pricing

Qty Low High
1+ $0.19 $0.19
10+ $0.12 $0.12
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.05 $0.05
3,000+ $0.03 $0.03
6,000+ $0.03 $0.03
24,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

DTA113EET1G Features

  • Integrated bias resistors R1 and R2.
  • Rated for 50V collector-emitter voltage.
  • Continuous collector current up to 100mA.
  • Surface mount SC-75 (SOT-416) package.
  • RoHS compliant and halogen free.

DTA113EET1G Applications

  • Ideal for switching and interface circuits.
  • Reduces board space and component count.
  • Suitable for general purpose digital applications.

DTA113EET1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the DTA113EET1G?

The maximum collector-emitter voltage (VCEO) is 50V.

What package is the DTA113EET1G available in?

The DTA113EET1G is packaged in SC-75 (SOT-416) surface mount package.

Is the DTA113EET1G RoHS compliant?

Yes, the device is RoHS compliant and also halogen free/BFR free.

What is the maximum collector current?

The maximum continuous collector current (IC) is 100mA.

What are the integrated resistor values?

The base resistor (R1) is 1kΩ and the base-emitter resistor (R2) is 1kΩ.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain is 3 at Ic=5mA, Vce=10V.

What is the saturation voltage?

The maximum collector-emitter saturation voltage is 250mV at Ib=5mA, Ic=10mA.

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