| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,902 pcs
|
10902 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The DTA014EEBTL is a PNP pre-biased bipolar junction transistor (BJT) from ROHM Semiconductor. Pre-biased types integrate a bias resistor network, and this part includes a 10 kΩ base resistor to simplify circuit design. The device is rated for 50 V collector-emitter breakdown voltage, 50 mA collector current, and 150 mW power dissipation.
Electrical specifications include a transition frequency of 250 MHz, a minimum DC current gain (hFE) of 35 at 5 mA collector current and 10 V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 150 mV at 500 µA base current and 5 mA collector current. These characteristics support moderate-speed switching and low on-state losses in small-signal applications.
The transistor is supplied in a surface-mount SC-89 (SOT-490) package, with an EMT3F (SOT-416FL) supplier device package. Its tiny footprint is suitable for compact, high-density PCB designs and automated assembly processes. The part is intended for applications such as level shifting, interface circuits, and logic output buffering.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.18 | $0.18 |
| 10+ | $0.11 | $0.11 |
| 100+ | $0.07 | $0.07 |
| 500+ | $0.05 | $0.05 |
| 1,000+ | $0.04 | $0.04 |
| 3,000+ | $0.03 | $0.03 |
| 6,000+ | $0.03 | $0.03 |
| 9,000+ | $0.03 | $0.03 |
| 24,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50 V.
It is offered in a surface-mount SC-89 (SOT-490) package, also specified as EMT3F (SOT-416FL).
The part is listed as RoHS3 compliant in existing database records.
It is a PNP pre-biased bipolar junction transistor (BJT).
The collector current rating is 50 mA.
The maximum power dissipation is 150 mW.
Yes, it includes a built-in base resistor of 10 kΩ.