| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | 1901+ | On Request | On Request |
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The DTA013ZEBTL is a PNP pre-biased bipolar junction transistor from ROHM Semiconductor. It features a built-in 10kΩ base resistor, simplifying circuit design by reducing external component count. The transistor is rated for a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA, with a maximum power dissipation of 150mW.
Electrical characteristics include a transition frequency of 250MHz, a minimum DC current gain (hFE) of 30 at Ic=5mA, Vce=10V, and a collector-emitter saturation voltage of 150mV maximum at Ib=500µA, Ic=5mA. These parameters make it suitable for general-purpose switching and low-power amplifier applications.
The device is offered in a surface-mount SC-89 package (also SOT-490), with the supplier device package specified as EMT3F (SOT-416FL). Its compact footprint is ideal for space-constrained designs in consumer electronics, portable devices, and other low-power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.23 | $0.23 |
| 10+ | $0.14 | $0.14 |
| 100+ | $0.09 | $0.09 |
| 500+ | $0.07 | $0.07 |
| 1,000+ | $0.06 | $0.06 |
| 3,000+ | $0.05 | $0.05 |
| 6,000+ | $0.04 | $0.04 |
| 9,000+ | $0.03 | $0.03 |
| 24,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
It is available in SC-89 (SOT-490) surface mount package with supplier device package EMT3F (SOT-416FL).
Yes, it is marked as RoHS3 compliant, but this status is unverified and should be treated as low confidence.
The built-in base resistor is 10kΩ.
The transition frequency is 250 MHz.
The minimum hFE is 30 at Ic=5mA, Vce=10V.