DSS5540X-13

The DSS5540X-13 is a 40V, 4A PNP bipolar transistor from Diodes Incorporated, designed for medium power switching and amplification applications. It offers a collector-emitter breakdown voltage (VCEO) of -40V and a continuous collector current (IC) of -4A, with a peak pulse current capability of -10A. The DC current gain (hFE) is typically 150 at 2A collector current and 2V VCE, ensuring good amplification performance. The collector-emitter saturation voltage (VCE(sat)) is a low 375mV maximum at 5A collector current and 500mA base current, minimizing power loss. Power dissipation is rated at 900mW on a standard PCB and 2W on a recommended pad layout, with thermal resistance from junction to ambient of 139°C/W (standard PCB) and 62.5°C/W (recommended pad). The transistor operates over a junction temperature range of -55°C to 150°C and has a transition frequency (fT) of 60MHz. It is packaged in a surface-mount SOT89-3 (TO-243AA) package, with matte tin plated leads and a weight of 0.055g. The device is RoHS3 compliant, halogen and antimony free, and has an MSL rating of Level 1 (unlimited). For automotive applications requiring specific change control, parts can be qualified to AEC-Q101 upon request.